STGW25H120DF2 IGBT Module 1200V 25A ?C Fuji Electric Power Semiconductor Module

STGW25H120DF2 Overview

The STGW25H120DF2 is a high-performance IGBT module designed for demanding power conversion applications. With a collector-emitter voltage rating of 1200 V and a continuous collector current of 25 A, it offers robust switching capabilities suitable for industrial drives, renewable energy, and power supplies. The device integrates a high-speed, low-loss IGBT chip with a complementary fast diode, enabling efficient energy management and reduced system losses. Its compact, isolated package ensures easy integration and thermal management, making it a reliable choice for engineers and sourcing specialists seeking durable semiconductor solutions from IC Manufacturer.

STGW25H120DF2 Technical Specifications

STGW25H120DF2 Key Features

• High voltage blocking capability: Rated for 1200 V, it supports high-power industrial applications with reliable insulation and safety margins.
• Low saturation voltage: Minimizes conduction losses, improving overall efficiency in power conversion systems.
• Integrated freewheeling diode: Provides fast recovery to reduce switching losses and enhance system reliability.
• Compact DF2 package: Ensures excellent thermal dissipation and electrical isolation, simplifying system design and integration.
• Robust gate drive tolerance: Supports ??20 V gate-emitter voltage, allowing flexible drive conditions for enhanced switching performance.

Typical Applications

• Industrial motor drives requiring efficient and reliable power switching to control speed and torque in demanding environments.
• Renewable energy inverters for photovoltaic and wind power systems to maximize energy conversion efficiency.
• Uninterruptible Power Supplies (UPS) providing stable power with fast switching and low losses.
• Switch-mode power supplies (SMPS) in industrial and commercial equipment, benefiting from low conduction and switching losses.

STGW25H120DF2 Advantages vs Typical Alternatives

This module offers superior performance with its low conduction losses and fast switching capability, which are critical for high-efficiency power systems. Compared to typical discrete IGBTs or older modules, it provides enhanced thermal management and electrical isolation in a compact form factor. The integrated diode and robust voltage ratings improve reliability and reduce component count, simplifying design and sourcing for engineers focused on durable and efficient semiconductor solutions.

STGW25H120DF2 Brand Info

The STGW25H120DF2 is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics specializes in power semiconductors designed for industrial and automotive applications, delivering innovative solutions for energy efficiency and system reliability. This IGBT module exemplifies ST??s commitment to combining advanced chip technology with rugged packaging to meet the stringent demands of modern power electronics.

FAQ

What is the maximum collector current rating of this IGBT module?

The module supports a continuous collector current of 25 A, making it well-suited for medium power applications requiring reliable current handling under nominal operating conditions.

What type of package does the device use, and how does it benefit thermal management?

It comes in a Dual Flat Package (DF2) that offers excellent thermal dissipation and electrical isolation, helping maintain device temperature within safe limits