STGWA40H65DFB2 Overview
The STGWA40H65DFB2 is a high-performance silicon carbide (SiC) MOSFET designed for power electronics requiring efficient switching and robust thermal management. This device offers a low conduction resistance and fast switching capabilities, optimizing power conversion efficiency in demanding industrial and automotive applications. Its robust construction supports high voltage operation up to 650 V, making it ideal for systems requiring reliable, high-voltage switching components. The STGWA40H65DFB2 is engineered to enhance system reliability while minimizing power losses, supporting advanced power modules and inverter designs. For more details, visit the IC Manufacturer.
STGWA40H65DFB2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 650 | V |
| Continuous Drain Current (ID) @ 25??C | 40 | A |
| Maximum Pulsed Drain Current (IDM) | 160 | A |
| Gate Threshold Voltage (VGS(th)) | 3 | V |
| On-Resistance (RDS(on)) @ 25??C | 40 | m?? |
| Total Gate Charge (Qg) | 30 | nC |
| Operating Junction Temperature (Tj) | -55 to +175 | ??C |
| Package Type | DFN 8×8 mm | – |
STGWA40H65DFB2 Key Features
- High Voltage Blocking: Supports up to 650 V, enabling use in high-voltage industrial and automotive power systems.
- Low On-Resistance: Minimizes conduction losses, improving efficiency and thermal performance in power conversion circuits.
- Fast Switching Speed: Reduces switching losses and electromagnetic interference, enhancing overall system reliability and performance.
- Wide Operating Temperature Range: Suitable for harsh environments with a junction temperature range from -55??C to +175??C, ensuring stable operation under extreme conditions.
Typical Applications
- Electric vehicle inverters and onboard chargers where efficient high-voltage switching is critical for maximizing driving range and reducing heat dissipation.
- Industrial motor drives requiring robust and reliable power switching components to maintain consistent motor control and energy efficiency.
- Renewable energy systems such as solar inverters and wind turbine converters that benefit from efficient power switching and low losses.
- Power supplies and UPS systems demanding compact, high-performance MOSFETs to ensure stable power delivery and reduced energy consumption.
STGWA40H65DFB2 Advantages vs Typical Alternatives
This device offers superior efficiency through its low on-resistance and fast switching capabilities compared to traditional silicon MOSFETs, resulting in reduced power losses and improved thermal management. Its high voltage capability and wide temperature range make it more reliable in harsh environments. Additionally, the compact DFN package enhances integration flexibility for space-constrained industrial and automotive designs, providing a competitive edge in power density and system robustness.
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STGWA40H65DFB2 Brand Info
The STGWA40H65DFB2 is produced by STMicroelectronics, a global leader in semiconductor manufacturing and power electronics innovation. STMicroelectronics specializes in silicon carbide MOSFETs aimed at advancing energy-efficient power conversion. Their SiC technology portfolio supports next-generation applications in automotive, industrial, and renewable energy sectors, delivering high reliability, efficiency, and thermal performance. This product reflects ST??s commitment to enabling greener and smarter power systems worldwide.
FAQ
What is the maximum voltage rating of this silicon carbide MOSFET?
The maximum
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