STGP19NC60SD Overview
The STGP19NC60SD is a high-performance silicon carbide (SiC) MOSFET designed for industrial power applications demanding high efficiency and robust switching capabilities. With a blocking voltage rating of 600 V and a continuous drain current of 19 A, this device offers excellent conduction and switching performance, reducing power losses and improving system reliability. Its advanced trench gate technology ensures low on-resistance and fast switching speed, making it ideal for use in power conversion, motor drives, and renewable energy systems. For detailed technical information, visit IC Manufacturer.
STGP19NC60SD Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 19 A |
| Gate-Source Voltage (VGS) | ??20 V |
| On-Resistance (RDS(on)) | Typical 0.19 ?? @ VGS = 20 V |
| Package Type | TO-247 |
| Maximum Junction Temperature (Tj) | 175 ??C |
| Total Gate Charge (Qg) | Approx. 35 nC |
| Rise Time (tr) | 27 ns |
| Fall Time (tf) | 45 ns |
STGP19NC60SD Key Features
- High blocking voltage: The 600 V rating supports high-voltage industrial applications, ensuring robust operation under demanding conditions.
- Low on-resistance: Reduces conduction losses, which enhances overall system efficiency and thermal performance during operation.
- Fast switching speed: Minimizes switching losses and electromagnetic interference (EMI), critical for compact and efficient power converters.
- Wide operating temperature range: Supports junction temperatures up to 175 ??C, providing higher reliability in harsh environments.
Typical Applications
- High-efficiency power supplies and converters where low conduction and switching losses improve energy savings and thermal management.
- Motor drives enabling precise speed and torque control in industrial automation with high power density requirements.
- Renewable energy systems such as solar inverters and wind turbine converters that benefit from high-voltage blocking and robust switching.
- Electric vehicle on-board chargers and DC-DC converters needing fast switching and thermal stability for improved performance.
STGP19NC60SD Advantages vs Typical Alternatives
This device offers significant advantages over traditional silicon MOSFETs, including lower on-resistance and faster switching speeds, which enhance power efficiency and reduce thermal stress. Its high voltage capability and wide temperature tolerance provide superior reliability and robustness in industrial settings. Compared to competing SiC devices, it balances performance and cost-effectiveness, making it a preferred choice for engineers seeking optimized power management solutions.
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STGP19NC60SD Brand Info
The STGP19NC60SD is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in innovative power devices, including silicon carbide MOSFETs, designed to meet the rigorous demands of industrial and automotive applications. Their SiC MOSFET portfolio is recognized for high efficiency, reliability, and enabling next-generation power electronics with enhanced energy savings and system integration.
FAQ
What is the maximum operating voltage of the STGP19NC60SD?
The maximum drain-source voltage rating is 600 V, allowing the device to operate safely in high-voltage industrial power systems without breakdown or damage under normal conditions.
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What package does this MOSFET come in, and why is it important?
This device is housed in a TO-247 package, which offers excellent thermal dissipation and mechanical robustness, making it suitable for high-power applications requiring effective heat management.
How does the low on-resistance benefit system performance?
Lower on-resistance reduces conduction losses, which translates to higher overall efficiency and less heat generation. This improves the device??s thermal stability and extends the lifespan of
