STGB10H60DF Overview
The STGB10H60DF is a robust high-voltage, high-speed silicon carbide (SiC) power diode designed for industrial and automotive applications requiring efficient switching and superior thermal performance. With a blocking voltage of 600V and a forward current capability of 10A, it offers low reverse recovery charge, enhancing power conversion efficiency and reducing system losses. Engineered for harsh environments, this device ensures high reliability and fast switching speeds, making it an ideal choice for power supplies, inverters, and motor drives. For detailed technical support and sourcing, visit IC Manufacturer.
STGB10H60DF Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (V_RRM) | 600 | V |
| Average Forward Current (I_F(AV)) | 10 | A |
| Surge Non-Repetitive Forward Current (I_FSM) | 100 | A |
| Junction Temperature Maximum (T_J) | 175 | ??C |
| Forward Voltage Drop (V_F) at 10A | 1.9 | V |
| Reverse Recovery Charge (Q_rr) | 35 | nC |
| Thermal Resistance Junction to Case (R_??JC) | 1.5 | ??C/W |
| Package Type | DFN 7x7mm | ?? |
STGB10H60DF Key Features
- High Blocking Voltage: Rated for 600V, ensuring robust performance in high-voltage power conversion systems.
- Low Forward Voltage Drop: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- Fast Switching Speed: Low reverse recovery charge enhances switching efficiency, which is critical for high-frequency applications.
- Compact DFN Package: Enables efficient thermal management and allows for high-density PCB layouts in space-constrained designs.
Typical Applications for STGB10H60DF Silicon Carbide Diode
- Power factor correction circuits in industrial power supplies, improving energy efficiency and reducing harmonic distortion.
- Motor drive inverters that require fast switching diodes capable of handling high current and voltage stresses.
- Solar inverters where high efficiency and thermal stability are essential for converting solar power to usable AC electricity.
- Uninterruptible power supplies (UPS) that demand reliable and efficient diodes for continuous power delivery under varying loads.
STGB10H60DF Advantages vs Typical Alternatives
This silicon carbide diode stands out compared to traditional silicon diodes by offering significantly lower switching losses and higher temperature tolerance. Its reduced reverse recovery charge contributes to enhanced efficiency in power conversion systems, while the compact DFN package improves thermal dissipation and facilitates integration in modern, space-limited designs. These factors combine to deliver better reliability and energy savings for demanding industrial and automotive applications.
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STGB10H60DF Brand Info
The STGB10H60DF is manufactured by STMicroelectronics, a leading global semiconductor company recognized for its innovation in power electronics. STMicroelectronics specializes in silicon carbide technology, delivering advanced discrete components tailored for high-efficiency power management. This diode exemplifies the company??s commitment to providing reliable, high-performance semiconductors that meet the rigorous demands of industrial and automotive sectors worldwide.
FAQ
What is the maximum operating temperature for the STGB10H60DF diode?
The maximum junction temperature for this diode is 175??C, allowing it to operate reliably under high thermal stress conditions commonly found in industrial power electronics environments.
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How does the low reverse recovery charge benefit circuit performance?
A low reverse recovery charge reduces switching losses and electromagnetic interference (EMI), enabling higher switching frequencies and improving the overall efficiency of power conversion
