STGP7H60DF IGBT Power Module 1200V 75A – Toshiba Package

  • This device provides efficient switching control, improving power conversion reliability in electronic circuits.
  • Featuring a high voltage rating, it ensures stable operation under demanding electrical conditions.
  • Its compact LFCSP package offers board-space savings, making it suitable for space-constrained designs.
  • Ideal for power management in industrial systems, it supports consistent performance under varying loads.
  • Manufactured to meet strict quality standards, the component maintains durability over extended use.
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STGP7H60DF Overview

The STGP7H60DF is a high-performance insulated-gate bipolar transistor (IGBT) module designed for industrial power electronics applications requiring reliable switching and efficient power management. This device integrates advanced semiconductor technology to deliver robust performance in high-voltage environments, supporting currents up to 7 A and blocking voltages up to 600 V. With its optimized thermal characteristics and compact form factor, it is suited for demanding applications such as motor drives, power inverters, and renewable energy systems. Engineers and sourcing specialists will find the STGP7H60DF an ideal choice for enhancing system efficiency and reliability in power conversion designs. For more details, visit IC Manufacturer.

STGP7H60DF Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCES)600V
Collector Current (IC)7A
Gate-Emitter Voltage (VGES)??20V
Power Dissipation (Ptot)60W
Junction Temperature (Tj)-40 to 150??C
Isolation Voltage2500V RMS
Turn-On Delay Time (td(on))70ns
Turn-Off Delay Time (td(off))130ns
Package TypeDual Flat No-Lead (DFN)

STGP7H60DF Key Features

  • 600 V Blocking Capability: Enables operation in medium-voltage power circuits, ensuring safe and reliable switching under high-voltage conditions.
  • Low Switching Losses: Fast turn-on and turn-off delay times reduce energy dissipation, improving overall system efficiency and thermal management.
  • Compact DFN Package: Facilitates high-density PCB layouts and enhances thermal dissipation with a low-profile form factor suitable for space-constrained applications.
  • Wide Junction Temperature Range: Operates reliably from -40??C to 150??C, supporting harsh industrial environments.
  • High Isolation Voltage: Provides galvanic isolation up to 2500 VRMS, critical for safety and noise immunity in power electronics systems.
  • Robust Gate Drive Tolerance: ??20 V gate-emitter voltage rating allows flexibility in drive voltage without risk of damage.
  • Optimized Thermal Performance: Supports power dissipation up to 60 W, enabling efficient heat management in demanding applications.

Typical Applications

  • Industrial motor drives requiring efficient and reliable switching components to control speed and torque in AC and DC motors.
  • Power inverters for renewable energy systems, including solar and wind, where high voltage and efficiency are essential.
  • Switch mode power supplies (SMPS) demanding fast switching and high power density for industrial equipment.
  • Uninterruptible power supplies (UPS) systems that require robust and stable switching devices to maintain continuous power delivery.

STGP7H60DF Advantages vs Typical Alternatives

This IGBT module offers superior voltage blocking and current handling compared to standard discrete transistors, enhancing system reliability. Its low switching delay times reduce power loss and improve efficiency, while the compact DFN package supports advanced PCB design with better thermal dissipation. The wide operating temperature and high isolation voltage provide durability and safety in industrial environments, making it a preferred choice over less integrated or bulkier components.

STGP7H60DF Brand Info

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