STGD6M65DF2 Overview
The STGD6M65DF2 is a high-performance dual N-channel MOSFET designed for power switching applications requiring low on-resistance and fast switching speeds. Engineered to optimize efficiency and reliability, this device supports advanced power management in industrial and automotive systems. Its compact DFN8 package enhances thermal dissipation and integration flexibility, making it suitable for space-constrained designs. With robust electrical characteristics and precise control, it meets the demands of engineers and sourcing specialists seeking dependable semiconductor solutions from IC Manufacturer.
STGD6M65DF2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | Dual N-Channel MOSFET | – |
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) | 6.5 | A |
| On-Resistance (RDS(on)) @ VGS=4.5V | 11.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 0.7 – 1.5 | V |
| Total Gate Charge (Qg) | 7.5 | nC |
| Power Dissipation (PD) | 1.25 | W |
| Package | DFN8 (3×3 mm) | – |
STGD6M65DF2 Key Features
- Low On-Resistance: Minimizes conduction losses to increase overall system efficiency, enabling more power to be delivered with less heat generation.
- Dual N-Channel Configuration: Provides flexible circuit design options, allowing easier implementation of half-bridge or synchronous rectifier topologies.
- Compact DFN8 Package: Enhances thermal management and supports high-density PCB layouts, critical for modern industrial and automotive electronics.
- Fast Switching Capability: Reduces switching losses, improving performance in high-frequency power conversion applications.
Typical Applications
- Power management modules in industrial automation systems, where efficient switching and thermal performance are essential for reliability and long-term operation.
- Automotive electronic control units requiring robust MOSFETs capable of handling transient loads and ensuring system stability.
- DC-DC converters and synchronous rectifiers that benefit from low gate charge and fast switching to optimize power efficiency.
- Battery management systems in portable and stationary energy storage solutions, demanding compact and low-loss switching devices.
STGD6M65DF2 Advantages vs Typical Alternatives
This device stands out through its combination of low on-resistance and fast switching in a compact DFN8 package, offering superior power efficiency and integration density compared to standard MOSFETs. Its dual N-channel configuration provides design flexibility, while robust electrical characteristics ensure reliability under varying load conditions. These advantages make it a preferred choice over typical alternatives that may compromise on conduction losses or thermal performance.
🔥 Best-Selling Products
STGD6M65DF2 Brand Info
The STGD6M65DF2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions known for innovation and quality. STMicroelectronics specializes in power management devices, offering a broad portfolio that addresses industrial, automotive, and consumer electronics markets. This MOSFET reflects ST??s commitment to delivering efficient, reliable components that help engineers optimize system performance and reduce power consumption.
FAQ
What is the maximum voltage rating of this MOSFET?
The device supports a maximum drain-source voltage of 30 volts, making it suitable for low to medium voltage power switching applications where safe operation under these conditions is critical.
🌟 Featured Products
-
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
