STMicroelectronics STGB30M65DF2 IGBT Module 30A 650V, 3-Phase Bridge Package

  • This device efficiently switches power, enabling effective control in various electronic circuits.
  • STGB30M65DF2 offers low on-resistance, reducing energy loss and improving overall system efficiency.
  • The compact package design minimizes board space, aiding in smaller and lighter device construction.
  • Ideal for motor control applications, it enhances performance by delivering stable and precise power delivery.
  • Built to meet standard quality tests, ensuring durability and consistent operation under typical conditions.
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STGB30M65DF2 Overview

The STGB30M65DF2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power switching in industrial applications. Engineered to handle high voltage and current ratings, it supports reliable operation in demanding environments. This device integrates a diode for optimized switching performance and features a compact, robust package that ensures thermal efficiency and mechanical durability. Suitable for use in motor drives, inverters, and power supplies, the STGB30M65DF2 delivers enhanced switching speed and low conduction losses, contributing to overall system efficiency. Available from IC Manufacturer, it is tailored for engineers and sourcing specialists seeking dependable semiconductor solutions.

STGB30M65DF2 Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vces)650V
Collector Current (Ic)30A
Gate-Emitter Voltage (Vge)??20V
Power Dissipation (Ptot)300W
Junction Temperature (Tj)-40 to 150??C
Storage Temperature (Tstg)-40 to 150??C
Diode Forward Current (If)30A
Package TypeDual Flat Package (DF2)?C

STGB30M65DF2 Key Features

  • High voltage and current capability: Supports up to 650 V and 30 A, enabling robust performance in demanding power electronic circuits.
  • Integrated freewheeling diode: Enhances switching efficiency and reduces losses, which is critical for inverter and motor drive applications.
  • Thermally optimized package: The Dual Flat Package (DF2) offers excellent heat dissipation, improving reliability and long-term operation stability.
  • Wide operating temperature range: Ensures consistent performance from -40??C to 150??C junction temperature, suitable for harsh industrial environments.

Typical Applications

  • Medium-power motor drives requiring efficient switching and thermal management for industrial automation systems.
  • Switch-mode power supplies (SMPS) where high switching speed and low conduction losses improve overall energy efficiency.
  • Uninterruptible Power Supplies (UPS) demanding reliable IGBT performance to maintain continuous power delivery.
  • Renewable energy inverters, enabling efficient DC to AC conversion with minimized switching noise and thermal stress.

STGB30M65DF2 Advantages vs Typical Alternatives

This device stands out due to its balanced combination of high voltage blocking and continuous current capability, making it well-suited for industrial power conversion. Its integrated diode and thermally optimized packaging reduce switching losses and improve heat dissipation compared to standard discrete IGBTs. This results in enhanced system reliability, lower thermal stress, and better efficiency, crucial factors for engineers seeking dependable semiconductor solutions in demanding applications.

STGB30M65DF2 Brand Info

The STGB30M65DF2 is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics is renowned for delivering reliable and innovative power semiconductor devices tailored to industrial and automotive sectors. This module benefits from ST??s extensive expertise in IGBT design and packaging technologies, ensuring high-performance, low-loss switching components that meet strict quality and reliability standards. The device??s robust build and proven technology make it a preferred choice for engineers designing power electronics systems worldwide.

FAQ

What is the maximum collector-emitter voltage rating of this IGBT module?

The maximum collector-emitter voltage rating is 650 V, which allows it to be used in medium-voltage power conversion applications such as motor drives and inverters.

Can this module operate reliably in high-temperature environments?

Yes, it supports a junction temperature range from -40??C up to 150??C, making it suitable for harsh industrial environments where thermal stability is critical.

Does the module include an integrated diode, and why is this important?

It includes an integrated freewheeling diode, which improves switching efficiency by reducing losses and

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