STB24N60M6 Overview
The STB24N60M6 is a high-voltage N-channel MOSFET designed for efficient power switching in industrial and consumer electronics. With a voltage rating of 600V and a continuous drain current capacity of 24A, it supports high-power applications requiring reliable switching performance. Its rugged construction and low on-resistance contribute to improved energy efficiency and thermal management. This device is suitable for use in power supplies, motor control, and other demanding applications. For more product details and sourcing options, visit IC Manufacturer.
STB24N60M6 Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id) at 25??C | 24 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0 V |
| Drain-Source On-Resistance (Rds(on)) | 0.24 ?? (max) at Vgs=10 V |
| Maximum Power Dissipation (Pd) | 150 W |
| Input Capacitance (Ciss) | 1200 pF |
| Operating Junction Temperature (Tj) | -55 to 150 ??C |
| Package Type | TO-220 |
STB24N60M6 Key Features
- High Voltage Rating: Supports up to 600V, enabling use in high-voltage power conversion and switching circuits.
- Low On-Resistance: Ensures minimal conduction losses, improving overall system efficiency and reducing heat generation.
- Robust Current Handling: Can continuously handle 24A at 25??C, suitable for medium to high-power applications requiring reliable current flow.
- Fast Switching Capability: Optimized gate charge and capacitance for efficient switching in PWM and motor drive circuits.
Typical Applications
- Power Supplies: Ideal for switched-mode power supplies (SMPS) where high voltage blocking and low losses are critical for efficient operation.
- Motor Control: Suitable for driving motors in industrial and consumer appliances, providing reliable switching and current handling.
- Lighting Ballasts: Used in electronic ballast designs for fluorescent and HID lamps to improve energy efficiency and lifespan.
- Inverters and Converters: Applicable in DC-AC inverters and DC-DC converters requiring robust high-voltage MOSFETs for power management.
STB24N60M6 Advantages vs Typical Alternatives
This MOSFET offers a compelling balance of high voltage capability and low on-resistance, reducing conduction losses compared to many standard MOSFETs. Its robust current rating and thermally efficient TO-220 packaging enhance reliability under demanding conditions. These characteristics deliver improved power efficiency and system longevity, making it a preferred choice over alternatives with higher losses or lower current ratings.
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STB24N60M6 Brand Info
The STB24N60M6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for their innovation in power management and discrete components, STMicroelectronics offers this MOSFET as part of their portfolio targeting industrial and consumer power applications. The device benefits from the company??s expertise in silicon technology, ensuring high quality, reliability, and availability worldwide.
FAQ
What is the maximum voltage rating of the STB24N60M6?
The device is rated for a maximum drain-source voltage of 600V, which allows it to operate safely in high-voltage power conversion circuits without risk of breakdown.
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How does the on-resistance affect the device??s performance?
Lower on-resistance means less power loss during conduction, which improves efficiency and reduces heat dissipation. This MOSFET??s Rds(on) of 0.24 ?? at Vgs=10 V supports efficient switching in power applications.
What package type does this MOSFET use, and why is it important?
The STB24N60M6 comes in a TO-220 package, which provides good thermal dissipation and ease of mounting on heat sinks, enabling reliable operation under high power conditions.
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Is this MOSFET suitable for motor control applications?
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|
