STP11NK50Z Overview
The STP11NK50Z is a high-voltage N-channel MOSFET designed for efficient power switching and robust performance in demanding industrial environments. With a drain-to-source voltage rating of 500V and low on-resistance, this transistor provides excellent switching capabilities for power conversion and control applications. Its rugged construction and optimized electrical characteristics make it suitable for high-frequency operation and reliable long-term use. Engineers and sourcing specialists can rely on this component for improved energy efficiency and thermal management. For more details, visit IC Manufacturer.
STP11NK50Z Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Id) | 11 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (Rds(on)) | 0.75 ?? @ Vgs=10V |
| Gate Charge (Qg) | 28 nC (typical) |
| Maximum Power Dissipation (Pd) | 75 W |
| Operating Junction Temperature (Tj) | -55 to 150 ??C |
STP11NK50Z Key Features
- High voltage tolerance: Supports up to 500 V drain-to-source voltage, enabling use in high-voltage switching and power supply circuits.
- Low on-resistance: The 0.75 ?? Rds(on) at 10 V gate drive minimizes conduction losses, improving overall circuit efficiency.
- High current capacity: Rated for continuous drain currents up to 11 A, suitable for moderate power applications requiring reliable current handling.
- Robust thermal performance: Designed to operate safely up to 150 ??C, ensuring reliability in harsh industrial environments.
Typical Applications
- Switch-mode power supplies (SMPS) where high voltage blocking and efficient switching are critical for energy conversion and regulation.
- Motor control circuits, enabling precise switching and control of induction or brushless DC motors.
- Lighting ballasts and electronic drivers that require high voltage MOSFETs for stable and efficient power delivery.
- Industrial automation systems, benefiting from the device??s ruggedness and reliable operation under varying load conditions.
STP11NK50Z Advantages vs Typical Alternatives
This MOSFET offers a balance of high voltage and current ratings with low on-resistance, which enhances switching efficiency and thermal management compared to typical alternatives. Its robust junction temperature range and optimized gate charge characteristics reduce power losses and improve system reliability, making it a preferred choice for industrial power electronics where sensitivity to efficiency and durability is crucial.
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STP11NK50Z Brand Info
The STP11NK50Z is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for its innovation in power devices, providing components that combine performance, efficiency, and reliability. This particular MOSFET is part of ST??s comprehensive portfolio targeting power management applications, supporting engineers with proven technology for industrial and automotive sectors.
FAQ
What is the maximum voltage rating of the STP11NK50Z?
The device supports a maximum drain-to-source voltage of 500 V, making it suitable for high-voltage switching applications such as power supplies and industrial automation.
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What is the significance of the on-resistance value for this MOSFET?
The on-resistance of 0.75 ?? at a gate voltage of 10 V directly affects conduction losses. Lower on-resistance improves efficiency by reducing heat generation during operation, which is critical in power-sensitive environments.
Can this MOSFET handle high operating temperatures?
Yes, it features an operating junction temperature range from -55 ??C to 150 ??C, ensuring reliable performance in harsh and high-temperature industrial conditions.
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What types of applications is this device best suited for?
This MOSFET is ideal for switch-mode power supplies, motor control circuits, lighting ballasts, and industrial automation systems that require efficient high-voltage switching and robust durability.
