STW24N60M2 Overview
The STW24N60M2 is a high-voltage N-channel MOSFET designed for switching and power management applications requiring robust performance at elevated voltages. Featuring a 600V drain-source rating and a low on-resistance, this device ensures efficient energy conversion with minimal losses. Its rugged construction supports high avalanche energy, making it suitable for demanding industrial environments. The STW24N60M2 is optimized for fast switching and reliable operation, enabling engineers to design compact, energy-efficient power solutions. For detailed technical support and procurement, visit IC Manufacturer.
STW24N60M2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) | 24 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 0.24 | ?? |
| Gate Charge (QG) | 41 | nC |
| Total Gate Charge (QG) | 41 | nC |
| Input Capacitance (Ciss) | 5400 | pF |
| Turn-on Delay Time (td(on)) | 22 | ns |
| Turn-off Delay Time (td(off)) | 90 | ns |
| Maximum Power Dissipation (PD) | 160 | W |
STW24N60M2 Key Features
- High Voltage Tolerance: Rated for 600V drain-source voltage, enabling use in high-voltage power conversion circuits with enhanced safety margins.
- Low On-Resistance: With an RDS(on) of 0.24 ??, it minimizes conduction losses, improving overall system efficiency and reducing thermal stress.
- Fast Switching Capability: Gate charge and switching delay times are optimized for rapid transitions, supporting high-frequency switching applications and reducing switching losses.
- Robust Avalanche Energy: The MOSFET can tolerate high avalanche energy, increasing reliability in inductive load switching and transient conditions.
Typical Applications
- Switch mode power supplies (SMPS) where high voltage and efficient switching enable compact and reliable power conversion units.
- Industrial motor drives requiring high voltage MOSFETs to manage inductive loads with fast switching and low losses.
- Lighting ballasts and electronic transformers, leveraging high voltage capability and low conduction losses for energy-efficient lighting control.
- Power factor correction (PFC) circuits where low on-resistance and fast switching improve power efficiency and reduce electromagnetic interference.
STW24N60M2 Advantages vs Typical Alternatives
This MOSFET offers a balanced combination of high voltage rating and low on-resistance, outperforming many typical alternatives by reducing conduction and switching losses. Its fast switching speed and robust avalanche energy capability provide enhanced reliability in industrial power systems. These advantages contribute to improved efficiency, thermal management, and system longevity, making it a practical choice for engineers designing high-performance power electronics.
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STW24N60M2 Brand Info
The STW24N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is known for delivering high-quality power MOSFETs that meet stringent industry standards. This product reflects the company??s commitment to innovation in power management devices, offering engineers reliable and efficient components for demanding industrial and consumer applications.
FAQ
What is the maximum voltage the STW24N60M2 can handle?
The device supports a maximum drain-source voltage of 600 volts, making it suitable for high-vol
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