STP9NK60Z Overview
The STP9NK60Z is a high-performance N-channel MOSFET designed for industrial and power electronics applications. With a voltage rating of 600 V and a low on-resistance, this transistor supports efficient switching and robust power management. Its reliable construction ensures high avalanche energy capability and thermal stability, making it suitable for demanding environments. This device is ideal for engineers seeking a balance of low conduction losses and fast switching speeds in motor drives, power supplies, and other high-voltage circuits. For detailed technical support and sourcing, visit IC Manufacturer.
STP9NK60Z Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) @ 25??C | 9 | A |
| On-Resistance (RDS(on)) @ VGS=10 V | 0.28 | ?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Maximum Gate-Source Voltage (VGS) | ??20 | V |
| Total Gate Charge (Qg) | 52 | nC |
| Power Dissipation (PD) | 150 | W |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
STP9NK60Z Key Features
- High Voltage Capability: Rated for 600 V drain-source voltage, enabling its use in high-voltage switching applications with reliable performance.
- Low On-Resistance: Thanks to a maximum RDS(on) of 0.28 ?? at 10 V gate drive, it minimizes conduction losses and improves overall system efficiency.
- Robust Thermal Handling: Supports up to 150??C junction temperature, allowing operation in demanding environments without compromising reliability.
- Fast Switching Performance: Moderate total gate charge ensures efficient switching speeds, reducing switching losses in power conversion circuits.
Typical Applications
- Power supply units and converters, where efficient high-voltage switching and low conduction losses are essential for performance and thermal management.
- Motor control circuits requiring reliable MOSFETs capable of handling high voltage and current while maintaining rapid switching.
- Industrial automation systems that demand robust power transistors for switching and amplification in harsh operating conditions.
- General purpose switching applications in high-voltage environments, benefiting from the device’s balance of performance and ruggedness.
STP9NK60Z Advantages vs Typical Alternatives
This MOSFET stands out with its high voltage rating and low on-resistance, enabling lower conduction losses compared to many alternatives. Its robust thermal performance and gate charge characteristics deliver efficient switching and enhanced reliability under industrial conditions. These factors make it a preferred choice for engineers seeking a durable, efficient, and cost-effective solution for high-voltage power management.
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STP9NK60Z Brand Info
The STP9NK60Z is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs designed for automotive, industrial, and consumer applications. This product benefits from ST??s advanced fabrication technology, ensuring consistency, high quality, and long-term availability. The STP9NK60Z is part of ST??s portfolio of discrete power MOSFETs, known for their ruggedness and efficiency in demanding power electronics systems.
FAQ
What is the maximum voltage rating of this MOSFET?
The maximum drain-source voltage is 600 V, making it suitable for high-voltage power switching applications. This rating ensures the device can handle demanding industrial environments without breakdown.
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How does the on-resistance affect performance?
A low on-resistance, typically 0.28 ?? at 10 V gate drive, reduces conduction losses during
