STMicroelectronics STI24N60M2 24A 600V N-Channel MOSFET in TO-220 Package

  • This MOSFET enables efficient switching, reducing power loss in electronic circuits for improved energy use.
  • Its voltage rating supports safe operation under high voltage conditions, ensuring circuit stability and protection.
  • The compact package type offers board-space savings, facilitating integration into smaller or densely packed designs.
  • Ideal for power management in consumer electronics, it helps maintain performance while extending device lifespan.
  • Designed for durability, it undergoes rigorous testing to ensure consistent performance and long-term reliability.
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STI24N60M2 Overview

The STI24N60M2 is a high-voltage N-channel MOSFET designed for industrial power switching applications. Featuring a 600V drain-source voltage and a continuous drain current rating of 24A, it delivers robust performance under demanding conditions. This transistor offers low on-resistance for efficient conduction, ensuring reduced power loss and improved thermal management. Its rugged design suits applications such as power supplies, motor drives, and industrial converters. Engineers and sourcing specialists will find this device a reliable component for optimizing power efficiency and system durability. For more detailed product information, visit IC Manufacturer.

STI24N60M2 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Continuous Drain Current (ID) @ 25??C24A
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Drain-Source On-Resistance (RDS(on))0.24??
Maximum Gate-Source Voltage (VGS)??20V
Power Dissipation (PD)150W
Junction Temperature (Tj)-55 to 150??C
Package TypeTO-247

STI24N60M2 Key Features

  • High Voltage Rating: Supports up to 600V drain-source voltage, enabling use in high-voltage power applications with increased safety margin.
  • Low On-Resistance: The 0.24 ?? RDS(on) minimizes conduction losses, improving overall system efficiency and reducing thermal stress.
  • Robust Current Handling: 24A continuous drain current rating allows reliable operation in demanding power switching environments.
  • Wide Operating Temperature Range: Rated for junction temperatures from -55??C to 150??C, ensuring stable performance under harsh industrial conditions.

Typical Applications

  • Industrial motor control circuits requiring efficient switching and high voltage tolerance to drive various motor types reliably.
  • Switched-mode power supplies (SMPS) benefiting from low conduction losses and high current capacity for improved energy efficiency.
  • Inverters and converters in renewable energy systems where robust high-voltage MOSFETs ensure stable power conversion.
  • General-purpose power switching in industrial automation equipment that demands rugged and reliable semiconductor components.

STI24N60M2 Advantages vs Typical Alternatives

This MOSFET offers a competitive balance of high voltage tolerance and low on-resistance, which reduces power loss compared to many standard high-voltage transistors. Its ability to handle 24A continuous current with a rugged package enhances system reliability and thermal performance. These characteristics make it a preferred choice for engineers aiming for efficient power management and long-term durability in industrial settings.

STI24N60M2 Brand Info

The STI24N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for delivering high-quality power devices, STMicroelectronics provides this MOSFET as part of their extensive portfolio targeting industrial power applications. The product benefits from ST??s expertise in power transistor technology, offering reliable performance with industry-standard packaging and specifications designed to meet rigorous industrial requirements.

FAQ

What is the maximum voltage that the STI24N60M2 can handle?

This MOSFET supports a maximum drain-source voltage of 600V, making it suitable for high-voltage power switching and industrial applications requiring robust voltage

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