The STF18N60M2 is a high-voltage N-channel MOSFET designed for demanding power switching applications. With a drain-to-source voltage rating of 600V and a continuous drain current of 18A, it is engineered to deliver efficient and reliable performance in industrial and consumer electronics. The device features low gate charge and on-resistance, enabling faster switching and reduced conduction losses. This component is ideal for use in power supplies, motor control, and other high-voltage circuits requiring robust and efficient switching elements. For more detailed product information, visit the IC Manufacturer website.
STF18N60M2 Technical Specifications
Parameter
Value
Unit
Drain-Source Voltage (VDS)
600
V
Continuous Drain Current (ID) at 25??C
18
A
Gate Threshold Voltage (VGS(th))
2.0 ?C 4.0
V
Maximum Pulsed Drain Current (IDM)
72
A
Drain-Source On-Resistance (RDS(on))
0.65
??
Total Gate Charge (Qg)
45
nC
Gate-Source Voltage (VGS)
??20
V
Operating Junction Temperature (Tj)
-55 to 150
??C
STF18N60M2 Key Features
High voltage capability: Rated for 600V drain-source voltage, it supports high-voltage switching applications, ensuring compatibility with industrial power systems.
Low on-resistance: The 0.65?? RDS(on) reduces conduction losses, improving overall efficiency and thermal performance in power circuits.
Fast switching performance: Low total gate charge allows for quicker switching transitions, which enhances efficiency in PWM and switching power supply designs.
Robust current handling: Continuous drain current of 18A and pulsed current up to 72A provide reliable operation under heavy load conditions.
Wide temperature range: Operates safely between -55??C and 150??C, suitable for harsh industrial environments.
Typical Applications
High-voltage power supplies: Efficient switching for SMPS and DC-DC converters requiring 600V MOSFETs to handle load currents up to 18A.
Motor control drives: Supports reliable switching in industrial motor drivers, providing the power handling and switching speed necessary for variable speed control.
Lighting ballasts: Ideal for electronic ballasts in fluorescent and HID lighting, where high voltage and efficient switching are critical.
Inverter circuits: Suitable for photovoltaic and uninterruptible power supply (UPS) inverters needing robust MOSFETs with fast switching characteristics.
STF18N60M2 Advantages vs Typical Alternatives
This MOSFET offers a balanced combination of high voltage rating and low on-resistance, delivering superior efficiency compared to many generic alternatives. Its fast switching capability reduces energy loss in switching applications, while the robust current handling improves reliability under demanding load conditions. Additionally, its wide operating temperature range and standardized gate voltage tolerance ensure stable performance, making it a preferred choice for industrial power electronics.
The STF18N60M2 is manufactured by STMicroelectronics, a leading global semiconductor company renowned for its power management solutions. STMicroelectronics specializes in high-performance MOSFETs designed for industrial and consumer electronics applications. This device is part of their power MOSFET portfolio, which emphasizes reliability, efficiency, and integration ease. The brand supports extensive technical documentation and application support, enabling engineers and sourcing specialists to implement this MOSFET confidently in various high-voltage switching designs.
