STD13NM60N Overview
The STD13NM60N is a high-performance N-channel MOSFET designed for efficient power switching applications. With a voltage rating of 600V and a continuous drain current capability of 13A, this device provides robust handling of high voltage and moderate current loads. It features low on-resistance to minimize conduction losses, enhancing overall system efficiency. Ideal for industrial power control, motor drives, and power supplies, this MOSFET delivers reliable switching performance with strong avalanche energy capability. For detailed technical support and sourcing, visit IC Manufacturer.
STD13NM60N Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Continuous Drain Current (ID) at 25??C | 13 | A |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Drain-Source On-Resistance (RDS(on)) | 0.75 | ?? |
| Maximum Gate-Source Voltage (VGS) | ??20 | V |
| Total Gate Charge (Qg) | 30 | nC |
| Maximum Power Dissipation (PD) | 120 | W |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
STD13NM60N Key Features
- High voltage rating: Supports up to 600V, enabling use in demanding industrial power circuits requiring robust voltage tolerance.
- Low conduction losses: On-resistance as low as 0.75?? reduces power dissipation, improving efficiency in switching applications.
- Strong avalanche capability: Ensures reliability during transient voltage spikes, protecting circuits from damage.
- Wide operating temperature range: Suitable for harsh environments with junction temperatures ranging from -55??C to 150??C.
Typical Applications
- Industrial motor drives: Efficiently handles switching for medium-power motors, ensuring reliable operation and reduced energy loss over extended runtime.
- Switch mode power supplies: Facilitates high-voltage switching with minimized conduction losses, improving overall power supply efficiency.
- Lighting ballasts: Controls high-voltage circuits in electronic ballast designs for energy-efficient lighting solutions.
- Power inverters: Supports robust switching performance in inverter circuits, enabling effective DC to AC power conversion.
STD13NM60N Advantages vs Typical Alternatives
This MOSFET offers superior voltage tolerance and low on-resistance compared to typical power transistors in the same class, which translates to better efficiency and thermal performance. Its robust avalanche energy handling and wide operating temperature range provide enhanced reliability in industrial environments. These advantages make it a preferred choice for engineers seeking durable, high-performance switching components.
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STD13NM60N Brand Info
The STD13NM60N is a product from STMicroelectronics, a global leader in semiconductor solutions. Known for quality and innovation, STMicroelectronics delivers reliable MOSFET devices designed to meet demanding industrial and automotive requirements. This device reflects the company’s commitment to combining performance with ruggedness, supporting a wide range of power management applications.
FAQ
What is the maximum drain-source voltage rating for this MOSFET?
The device is rated for a maximum drain-source voltage of 600V, making it suitable for high-voltage industrial and power electronics applications where robust voltage handling is critical.
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How does the on-resistance affect the device performance?
The low on-resistance of 0.75?? reduces conduction losses during operation, which improves efficiency and reduces heat generation, leading to more reliable and energy-efficient designs.
Can this MOSFET operate in high-temperature environments?
Yes, it supports an operating junction temperature range from -55??C up to 150??C, allowing it to perform reliably in harsh and demanding industrial conditions.
