The STF4N90K5 is a high-voltage N-channel MOSFET designed for robust switching applications requiring efficient power management and reliable performance. With a maximum drain-source voltage of 900 V and a continuous drain current rating suited for industrial workloads, it excels in both power conversion and motor control environments. This device features a low gate charge and optimized switching characteristics, enabling reduced switching losses and improved energy efficiency. Engineered for high avalanche energy capability, it ensures durability under transient conditions. For engineers and sourcing specialists seeking a reliable high-voltage MOSFET, the STF4N90K5 offers a compelling balance of performance and ruggedness. More details are available at IC Manufacturer.
STF4N90K5 Technical Specifications
Parameter
Specification
Drain-Source Voltage (VDS)
900 V
Continuous Drain Current (ID)
4 A
Gate Threshold Voltage (VGS(th))
2.0 ?C 4.0 V
RDS(on) Maximum
2.0 ?? @ VGS = 10 V
Total Gate Charge (Qg)
21 nC (typical)
Input Capacitance (Ciss)
280 pF (typical)
Power Dissipation (PD)
50 W
Operating Junction Temperature
-55 ??C to +150 ??C
Package Type
TO-220AB
STF4N90K5 Key Features
High voltage rating (900 V): Enables use in demanding industrial and power supply applications requiring robust voltage withstand capability.
Low gate charge: Reduces switching losses and improves overall efficiency in high-frequency switching circuits.
Low RDS(on) value: Minimizes conduction losses, enhancing thermal performance and reliability during continuous operation.
High avalanche energy capability: Provides ruggedness against voltage spikes and transient conditions, ensuring long operational lifetime.
Typical Applications for STF4N90K5 High-Voltage MOSFET
Switch mode power supplies (SMPS) in industrial power management systems, where efficient high-voltage switching is critical for energy savings and thermal control.
Motor drive circuits requiring reliable switching of inductive loads at high voltage and moderate current levels.
Uninterruptible power supplies (UPS) that demand high-voltage MOSFETs with excellent avalanche ruggedness for transient protection.
Lighting ballasts and electronic transformers, benefiting from low gate charge and efficient switching characteristics.
STF4N90K5 Advantages vs Typical Alternatives
This MOSFET provides an optimal balance between high-voltage capability and low conduction losses, outperforming many alternatives with higher RDS(on) or lower avalanche energy ratings. Its low gate charge contributes to improved switching efficiency, making it highly suitable for high-frequency industrial applications. The device??s robust avalanche energy handling enhances reliability under harsh transient conditions, ensuring longer life and reduced failure rates compared to typical MOSFETs in similar voltage classes.
The STF4N90K5 is manufactured by STMicroelectronics, a global leader in semiconductor technology specializing in advanced power transistor solutions. STMicroelectronics?? expertise in MOSFET design emphasizes ruggedness and efficiency, with products tailored for industrial power management, automotive, and consumer electronics. The STF4N90K5 belongs to ST??s extensive portfolio of high-voltage N-channel MOSFETs that meet stringent quality and performance standards, supporting engineers with reliable components optimized for demanding applications.
