The STB28N60M2 is a high-voltage N-channel MOSFET designed for demanding power switching applications. Offering a drain-source voltage rating of 600 V and a continuous drain current of 28 A, this device delivers robust performance for industrial and consumer electronics. Its low on-resistance ensures efficient power conversion and reduced heat dissipation, making it ideal for use in power supplies, motor control, and inverter circuits. The STB28N60M2 combines reliability with optimized switching characteristics, enabling engineers to achieve enhanced system efficiency and durability. For detailed technical and sourcing information, visit IC Manufacturer.
STB28N60M2 Technical Specifications
Parameter
Value
Unit
Drain-Source Voltage (VDS)
600
V
Continuous Drain Current (ID)
28
A
Pulsed Drain Current (IDM)
112
A
Gate Threshold Voltage (VGS(th))
2.0 – 4.0
V
Drain-Source On-Resistance (RDS(on))
0.28
??
Total Gate Charge (Qg)
Variable (refer to datasheet)
nC
Maximum Power Dissipation (PD)
160
W
Operating Junction Temperature Range (TJ)
-55 to 175
??C
STB28N60M2 Key Features
High voltage rating: Supports up to 600 V drain-source voltage, enabling use in high-voltage power systems.
Low on-resistance: Minimizes conduction losses, improving overall efficiency and reducing thermal stress on the device.
Robust current handling: Continuous current of 28 A ensures reliable operation under high load conditions.
Fast switching capability: Optimized gate charge characteristics allow efficient switching in PWM and inverter topologies.
Wide operating temperature range: Suitable for harsh environments with junction temperatures up to 175??C.
Typical Applications
Switch-mode power supplies (SMPS) requiring high-voltage, high-current MOSFETs for efficient energy conversion and thermal management.
Motor control circuits in industrial automation where reliable switching under heavy loads is critical.
DC-DC converters and inverters for renewable energy systems, benefiting from low conduction losses and fast switching.
Lighting ballasts and electronic control units that demand durable and efficient high-voltage switching components.
STB28N60M2 Advantages vs Typical Alternatives
This MOSFET offers a superior combination of high voltage capability and low on-resistance compared to many typical alternatives. Its ability to handle 28 A continuous current with minimal conduction loss improves system efficiency and reliability. The robust thermal performance supports demanding industrial applications, while fast switching characteristics reduce power dissipation. These advantages make it a preferred choice for power management circuits where accuracy, durability, and efficiency are critical.
The STB28N60M2 is produced by STMicroelectronics, a leading global semiconductor manufacturer known for its innovative power devices. STMicroelectronics specializes in high-performance MOSFETs designed to meet rigorous industrial standards. This product line reflects their commitment to delivering reliable, efficient components for power conversion and motor control applications. The STB28N60M2 is part of their extensive portfolio of power MOSFETs tailored for robust operation in harsh environments and complex power systems.
