STD70N10F4 Overview
The STD70N10F4 is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and automotive applications. Featuring a low on-resistance and robust avalanche energy capability, it ensures minimal conduction losses and reliable operation under demanding conditions. This transistor supports fast switching speeds, making it ideal for applications requiring high-frequency operation. The device??s TO-220 package provides excellent thermal performance and mechanical durability. Available from IC Manufacturer, this MOSFET offers a balance of power efficiency and ruggedness for engineers and sourcing specialists focusing on reliable power semiconductor solutions.
STD70N10F4 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (V_DS) | 100 | V |
| Continuous Drain Current (I_D) @ 25??C | 70 | A |
| On-Resistance (R_DS(on)) Max | 18 | m?? |
| Gate Threshold Voltage (V_GS(th)) | 2.0?C4.0 | V |
| Total Gate Charge (Q_g) | 55 | nC |
| Power Dissipation (P_D) | 150 | W |
| Operating Junction Temperature (T_j) | -55 to 175 | ??C |
| Package | TO-220 | – |
STD70N10F4 Key Features
- Low On-Resistance: Minimizes conduction losses, enhancing energy efficiency in power switching applications.
- High Continuous Drain Current: Supports up to 70A, allowing for high current loads without sacrificing performance.
- Robust Avalanche Energy Capability: Provides reliable operation during inductive load switching and transient conditions.
- Fast Switching Speeds: Enables high-frequency operation, improving overall system responsiveness and reducing switching losses.
- Wide Operating Temperature Range: Maintains performance in harsh industrial environments from -55??C to 175??C.
- TO-220 Package: Facilitates efficient heat dissipation and easy mounting for thermal management.
Typical Applications
- DC-DC converters and power supplies requiring efficient high-current switching with low losses and thermal stability.
- Motor control circuits where rapid switching and high current handling are essential for performance and durability.
- Automotive electronic systems demanding robust power MOSFETs to handle harsh electrical and thermal conditions.
- Industrial automation equipment benefiting from reliable MOSFETs that ensure energy-efficient power management.
STD70N10F4 Advantages vs Typical Alternatives
This MOSFET combines a low on-resistance with high current capability, outperforming many standard alternatives by reducing conduction losses and improving thermal efficiency. Its high avalanche energy rating increases reliability during transient events, making it ideal for inductive load switching. The fast switching speed further reduces power dissipation, enhancing overall system efficiency. Packaged in a TO-220 format, it offers superior heat dissipation and ease of installation compared to smaller or less robust packages.
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STD70N10F4 Brand Info
The STD70N10F4 is produced by STMicroelectronics, a global leader in semiconductor manufacturing. STMicroelectronics is recognized for its wide portfolio of power MOSFETs designed to meet the demanding requirements of industrial, automotive, and consumer electronics markets. This device exemplifies ST??s commitment to delivering high-reliability, energy-efficient components optimized for power management and switching applications. With extensive technical support and global availability, STMicroelectronics?? MOSFETs, including this model, provide trusted solutions for engineers and product developers worldwide.
FAQ
What is the maximum voltage rating of the STD70N10F4?
The device is rated for a maximum drain-to-source voltage of 100V, making it suitable for a wide range of medium-voltage power switching applications.
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How does the on-resistance affect the performance of the MOSFET?
Lower on-resistance reduces conduction losses, which leads to improved energy efficiency and less heat generation during operation, enhancing device reliability and system performance.
