STB100N6F7 Overview
The STB100N6F7 is a robust N-channel MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a low RDS(on) of 7 m??, it ensures minimal conduction losses, enabling high-efficiency operation. With a maximum drain-source voltage rating of 100 V and a continuous drain current of 120 A, this device is well-suited for demanding applications requiring high current handling and fast switching capabilities. Its optimized design supports reliable performance in power supplies, motor control, and automotive systems. For more detailed product insights, visit the IC Manufacturer.
STB100N6F7 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Continuous Drain Current (ID) @ 25??C | 120 | A |
| RDS(on) (Max) @ VGS=10 V | 7 | m?? |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 | V |
| Total Gate Charge (Qg) | 52 | nC |
| Power Dissipation (PD) | 300 | W |
| Operating Temperature Range | -55 to 175 | ??C |
| Package Type | TO-263 | ?C |
STB100N6F7 Key Features
- Low On-Resistance: With a maximum RDS(on) of 7 m??, it minimizes conduction losses, improving energy efficiency in power circuits.
- High Current Capability: Supports continuous drain currents up to 120 A, enabling robust handling of demanding loads.
- Fast Switching Performance: Optimized gate charge ensures quick turn-on and turn-off, reducing switching losses in high-frequency applications.
- Wide Operating Temperature Range: Rated for -55??C to 175??C, it guarantees reliable operation under harsh environmental conditions.
Typical Applications
- Power management in industrial systems where efficient switching and high current capacity are critical for system reliability and performance.
- Motor drive circuits requiring high current handling and low power dissipation for smooth operation and thermal stability.
- Switch-mode power supplies (SMPS) benefiting from low RDS(on) and fast switching to improve overall conversion efficiency.
- Automotive electronic modules where robust voltage and current ratings ensure safe operation in demanding environments.
STB100N6F7 Advantages vs Typical Alternatives
This MOSFET offers a competitive edge with its low on-resistance and high current capacity, directly reducing power losses and improving thermal management. Compared to typical alternatives, it ensures faster switching speeds and greater reliability over wide temperature ranges. Its TO-263 package enhances thermal dissipation and ease of assembly, making it a superior choice for engineers seeking dependable, high-performance power solutions.
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STB100N6F7 Brand Info
The STB100N6F7 is manufactured by STMicroelectronics, a global leader in semiconductor technology known for delivering innovative and reliable components. This MOSFET reflects ST??s commitment to quality and performance, featuring advanced silicon technology optimized for power efficiency. STMicroelectronics?? extensive support and robust supply chain make this device a trusted option in power management and switching applications worldwide.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device is rated for a maximum drain-source voltage of 100 V, allowing it to handle relatively high voltage levels typical in industrial and automotive power
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