STD35P6LLF6 STMicroelectronics N-Channel MOSFET 35V 35A PowerSO-8 Package

  • Converts input signals to digital output, enabling precise data processing and system control.
  • Features a sampling rate suitable for accurate signal representation in various electronic applications.
  • Offered in a compact package, allowing efficient use of PCB space in densely populated designs.
  • Ideal for integration in sensor interfaces where reliable analog-to-digital conversion improves measurement accuracy.
  • Manufactured under strict quality controls to ensure consistent performance and long-term operational stability.
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STD35P6LLF6 Overview

The STD35P6LLF6 is a high-performance P-channel MOSFET designed for efficient power management in industrial and automotive applications. Featuring a low on-resistance and robust voltage handling capabilities, it ensures minimal conduction losses and reliable switching performance. Its compact LFPAK56 package supports optimized thermal dissipation, making it ideal for high-density circuit designs. With proven ruggedness and optimized switching characteristics, this device is suitable for power conversion, motor control, and load switching applications. For more detailed information, visit the IC Manufacturer.

STD35P6LLF6 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)-60V
Continuous Drain Current (Id) at Tc=25??C-35A
Drain-Source On-Resistance (Rds(on)) at Vgs = -10 V6.7m??
Gate Threshold Voltage (Vgs(th))-1.0 to -3.0V
Total Gate Charge (Qg)15.0nC
Input Capacitance (Ciss)720pF
Maximum Power Dissipation (Pd)83W
Operating Junction Temperature (Tj)-55 to 150??C
PackageLFPAK56

STD35P6LLF6 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving power efficiency and reducing heat generation in switching applications.
  • High Drain Current Capability: Supports continuous drain currents up to 35 A, enabling high-load handling in compact designs.
  • Robust Voltage Rating: With a 60 V drain-source voltage rating, it is suitable for a wide range of industrial and automotive power circuits.
  • Optimized Gate Charge: Low total gate charge enhances switching speed, reducing switching losses and improving overall system efficiency.
  • Compact LFPAK56 Package: Provides excellent thermal performance and easy PCB integration for space-constrained environments.
  • Wide Operating Temperature Range: Ensures reliable operation from -55??C to 150??C, meeting demanding industrial requirements.

Typical Applications

  • DC-DC converters and synchronous rectification where low losses and high efficiency are critical for power supply performance.
  • Automotive electronic systems, including load switching and motor drive circuits that require rugged, reliable MOSFETs.
  • Power management in industrial automation equipment demanding high current handling and fast switching capabilities.
  • Battery management and protection circuits where low on-resistance and thermal performance extend device and system longevity.

STD35P6LLF6 Advantages vs Typical Alternatives

This device offers a low on-resistance combined with a high current rating, reducing power dissipation and improving thermal efficiency compared to typical alternatives. Its optimized gate charge contributes to faster switching speeds, minimizing switching losses. Packaged in a compact LFPAK56, it enables enhanced thermal management and easy PCB layout integration. These benefits translate into higher reliability and better performance in demanding industrial and automotive power applications.

STD35P6LLF6 Brand Info

The STD35P6LLF6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs designed for industrial and automotive sectors, delivering high-quality, reliable devices tailored to optimize power efficiency and system performance. This MOSFET benefits from ST??s advanced silicon technology and rigorous quality control, making it a trusted choice for engineers sourcing robust power components.

FAQ

What is the maximum voltage rating of this MOSFET?

The device supports a maximum drain-source voltage of -60 V, making it suitable for medium-voltage power conversion and switching applications commonly found in automotive and industrial systems.

How does the low on-resistance affect system performance?

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