STD25N10F7 STMicroelectronics N-Channel MOSFET 25A 100V TO-220 Package

  • Acts as a power MOSFET that efficiently switches electrical loads to optimize energy use.
  • Features a voltage rating suitable for medium to high voltage applications, ensuring safe operation.
  • Comes in a compact package that reduces PCB space, aiding in smaller device designs.
  • Ideal for motor control circuits, enhancing performance while maintaining thermal stability.
  • Manufactured to meet industry standards, providing consistent reliability under demanding conditions.
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STD25N10F7 Overview

The STD25N10F7 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and automotive applications. Featuring a low on-resistance and robust voltage rating, this device delivers reliable operation under demanding electrical conditions. Its optimized gate charge and fast switching capability reduce power losses, enhancing overall system efficiency. Packaged in a compact TO-220F form factor, it simplifies thermal management and mechanical integration. This MOSFET is ideal for engineers and sourcing specialists seeking a durable and cost-effective solution for power conversion and motor control circuits. For additional details, visit IC Manufacturer.

STD25N10F7 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)100V
Continuous Drain Current (Id) @ 25??C25A
Gate Threshold Voltage (Vgs(th))2.0 – 4.0V
Drain-Source On-Resistance (Rds(on))0.035??
Total Gate Charge (Qg)43nC
Gate-Source Charge (Qgs)7.3nC
Gate-Drain Charge (Qgd)15nC
Maximum Power Dissipation (Pd)80W
Operating Junction Temperature (Tj)-55 to 150??C
Package TypeTO-220F

STD25N10F7 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving energy efficiency and reducing heat generation during high-current operation.
  • High Voltage Rating (100 V): Supports robust switching in medium-voltage applications, ensuring safe operation under transient conditions.
  • Fast Switching Speed: Optimized gate charge parameters enable rapid switching, which is critical for high-frequency power converters and motor drives.
  • Thermally Efficient TO-220F Package: Facilitates effective heat dissipation and easy integration into existing thermal management systems.

Typical Applications

  • Power Management in Industrial Automation: Ideal for switching regulators and power controllers within factory automation equipment where reliability and efficiency are paramount.
  • DC-DC Converters: Suitable for use in point-of-load converters requiring fast switching and low conduction losses.
  • Motor Control Circuits: Provides robust switching capability for controlling brushless or brushed DC motors in automotive and industrial environments.
  • Power Supplies: Effective in switch-mode power supplies (SMPS) for consumer electronics and industrial power systems.

STD25N10F7 Advantages vs Typical Alternatives

This MOSFET offers a competitive advantage through its balance of low on-resistance and high voltage capability, enabling efficient power switching with less heat dissipation. Compared to typical alternatives, it supports higher current loads with improved thermal performance due to its TO-220F packaging. The optimized gate charge reduces switching losses, enhancing overall circuit efficiency and reliability, which is crucial for demanding industrial and automotive applications.

STD25N10F7 Brand Info

The STD25N10F7 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs optimized for energy-efficient switching and robust performance. This particular model reflects the company??s commitment to quality and innovation, offering engineers a reliable component with extensive application versatility in power management and control systems.

FAQ

What is the maximum drain-source voltage rating of the STD25N10F7?

The maximum drain-source voltage rating is 100 volts, which allows the device to operate safely in medium-voltage power switching applications, protecting it from voltage spikes and transient conditions.

How does the low on-resistance benefit power efficiency?

Lower on-resistance reduces the voltage drop across the MOSFET during conduction, resulting in decreased power dissipation and heat generation. This

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