ST Microelectronics STF10N60M2 10A 600V N-Channel MOSFET, TO-220 Package

  • Functions as a high-voltage power MOSFET enabling efficient switching in various electronic circuits.
  • Features a voltage rating suitable for handling demanding power requirements, ensuring stable operation.
  • Its package design offers a compact footprint, allowing for board-space savings in dense assemblies.
  • Ideal for power supply and motor control applications, improving overall system responsiveness and efficiency.
  • Built to meet standard reliability criteria, supporting consistent performance under typical operating conditions.
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STF10N60M2 Overview

The STF10N60M2 is a high-performance N-channel power MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a 600V drain-to-source voltage and a 10A continuous drain current capacity, it offers robust handling of high-voltage loads with low on-resistance for improved energy efficiency. Its fast switching characteristics enable reduced power losses in high-frequency applications. The device??s rugged construction ensures reliability in demanding environments. Ideal for power supplies, motor drives, and inverter circuits, the IC Manufacturer provides a trusted solution for engineers seeking high efficiency and durability in power transistors.

STF10N60M2 Technical Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDS)600V
Continuous Drain Current (ID)10A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0V
Maximum Gate-to-Source Voltage (VGS)??20V
On-Resistance (RDS(on))0.75??
Total Gate Charge (Qg)52nC
Power Dissipation (PD)75W
Operating Junction Temperature (TJ)-55 to 150??C

STF10N60M2 Key Features

  • High Voltage Capability: Supports up to 600V, enabling use in demanding power conversion and industrial switching applications.
  • Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and thermal management.
  • Fast Switching Speed: Reduces switching losses, critical for high-frequency power electronics such as SMPS and motor controllers.
  • Robust Gate Drive Tolerance: ??20V gate-to-source voltage rating allows for flexible drive schemes and improved reliability.

Typical Applications

  • Switched-mode power supplies (SMPS) requiring efficient high-voltage switching with minimal losses.
  • Motor control circuits in industrial automation, providing precise and reliable power delivery.
  • Inverter circuits for renewable energy systems, optimizing power conversion efficiency and durability.
  • General purpose high-voltage power switching in consumer electronics and lighting applications.

STF10N60M2 Advantages vs Typical Alternatives

This device offers a combination of high voltage rating and low on-resistance, delivering superior power efficiency compared to typical MOSFETs in the same class. Its robust gate voltage tolerance and fast switching capabilities reduce energy losses and improve system reliability. These features make it a preferred choice for engineers seeking durable and efficient solutions in industrial and power management applications.

STF10N60M2 Brand Info

The STF10N60M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics offers this MOSFET as part of their extensive portfolio of power discrete devices. The product benefits from ST??s expertise in silicon process technology, ensuring high performance, reliability, and ease of integration in demanding industrial and consumer power applications.

FAQ

What is the maximum drain-source voltage rating of this MOSFET?

The maximum drain-to-source voltage rating is 600V, making it suitable for high-voltage switching applications such as power supplies and motor drives.

How does the low on-resistance impact device performance?

Low on-resistance reduces conduction

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