STL11N3LLH6 Texas Instruments Low Dropout Regulator LDO, SOT-23 Package

  • STL11N3LLH6 provides efficient voltage regulation, ensuring stable power supply for sensitive electronics.
  • Operates within a defined voltage range to maintain consistent performance under varying conditions.
  • Compact LFCSP package reduces board space, enabling streamlined device designs in tight layouts.
  • Ideal for portable devices where reliable power management extends battery life and device uptime.
  • Designed with robust quality checks to ensure long-term operational reliability in demanding environments.
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STL11N3LLH6 Overview

The STL11N3LLH6 is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and automotive applications. With a low on-resistance and fast switching capabilities, it enables reduced conduction losses and improved thermal performance. This device supports robust operation under demanding conditions, ensuring reliability and enhanced system efficiency. Ideal for engineers and sourcing specialists focused on power electronics, the STL11N3LLH6 offers a balance of compact size and electrical performance. For detailed technical data and purchasing options, visit IC Manufacturer.

STL11N3LLH6 Technical Specifications

ParameterSpecification
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)30 V
Continuous Drain Current (ID)11 A
On-Resistance (RDS(on))3.3 m?? @ VGS = 4.5 V
Gate Threshold Voltage (VGS(th))1.0 – 2.5 V
Total Gate Charge (Qg)10 nC
Power Dissipation (PD)2.5 W
Operating Temperature Range-55??C to 150??C
Package TypePowerFLAT 3×3 mm

STL11N3LLH6 Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat dissipation.
  • High Continuous Drain Current Capability: Supports up to 11 A, making it suitable for medium power switching applications.
  • Compact PowerFLAT Package: Enables efficient PCB space utilization and improved thermal management in dense designs.
  • Fast Switching Performance: Reduces switching losses and improves responsiveness in high-frequency power circuits.

Typical Applications

  • DC-DC converters in automotive and industrial power supplies, where efficient power switching is critical for thermal management and energy savings.
  • Load switching and power distribution circuits requiring reliable control of high current loads with minimal voltage drop.
  • Battery management systems in electric vehicles and portable devices that demand low losses and compact footprint.
  • Motor control circuits, providing efficient drive performance and thermal stability for various industrial automation systems.

STL11N3LLH6 Advantages vs Typical Alternatives

This MOSFET offers a competitive advantage over typical alternatives due to its exceptionally low on-resistance combined with a compact package size, which results in lower conduction losses and improved thermal performance. Its high current handling capability and fast switching speeds ensure efficient operation in power management applications. These factors contribute to enhanced reliability and integration ease, making it a preferred choice for engineers focusing on optimized power efficiency and space-saving designs.

STL11N3LLH6 Brand Info

The STL11N3LLH6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation in power management devices, STMicroelectronics provides high-quality MOSFETs that cater to automotive, industrial, and consumer electronics markets. The STL series embodies ST??s commitment to delivering devices with excellent electrical performance, robust reliability, and advanced packaging technologies for demanding applications.

FAQ

What voltage rating does the STL11N3LLH6 support?

The device supports a maximum drain-source voltage of 30 volts, making it suitable for many medium-voltage power switching applications commonly found in automotive and industrial systems.

How does the on-resistance affect the performance of the MOSFET?

Lower on-resistance reduces power losses during conduction, leading to less heat generation and improved efficiency. The STL11N3LLH6 has an RDS(on) of 3.3 m?? at 4.5 V gate drive, which is beneficial for minimizing energy dissipation in power circuits.

What package type does this MOSFET use, and why is it important?

The STL11N

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