STMicroelectronics STF3LN80K5 800V N-Channel MOSFET, TO-247 Package

  • This device functions as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • STF3LN80K5 features a high voltage rating that supports robust performance under demanding electrical conditions.
  • Its compact package design reduces board space, aiding in the development of smaller, more integrated systems.
  • Ideal for power management in automotive or industrial applications, it enhances system reliability and efficiency.
  • Manufactured to meet stringent quality standards, it ensures consistent operation and long-term durability.
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STF3LN80K5 Overview

The STF3LN80K5 is a high-voltage N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. With a rated drain-source voltage of 800V and a continuous drain current of 3A, this device delivers robust performance in high-voltage applications. Its low gate charge and optimized switching characteristics enable minimized power loss and improved system efficiency. The device is housed in a compact TO-220 package, facilitating easy integration and reliable thermal management. The STF3LN80K5 is ideal for power conversion, motor control, and switching power supply circuits. For more detailed information, visit IC Manufacturer.

STF3LN80K5 Technical Specifications

ParameterSpecification
Drain-Source Voltage (VDS)800 V
Continuous Drain Current (ID) @ 25??C3 A
Gate Threshold Voltage (VGS(th))2.0 ?C 4.0 V
Maximum Gate-Source Voltage (VGS)??30 V
Drain-Source On-Resistance (RDS(on)) @ VGS = 10 V2.7 ??
Total Gate Charge (Qg)22 nC
Power Dissipation (PD)40 W
Operating Junction Temperature (TJ)-55??C to +150??C
Package TypeTO-220

STF3LN80K5 Key Features

  • High voltage rating: The 800V drain-source voltage supports demanding high-voltage power applications, ensuring robust performance under stress.
  • Low on-resistance: With a typical RDS(on) of 2.7 ?? at 10V gate drive, it reduces conduction losses, improving overall efficiency.
  • Efficient switching: Total gate charge of 22 nC enables fast switching with reduced switching losses, beneficial for high-frequency converters.
  • Wide operating temperature: Supports junction temperatures up to 150??C, allowing reliable operation in harsh industrial environments.

Typical Applications

  • Switching power supplies and DC-DC converters requiring high voltage handling and efficient switching performance.
  • Motor control circuits in industrial automation where robust voltage and current ratings are essential.
  • Power factor correction (PFC) stages in energy-efficient power supplies, leveraging low losses for improved system efficiency.
  • Lighting ballasts and other electronic control systems demanding reliable high-voltage MOSFET operation.

STF3LN80K5 Advantages vs Typical Alternatives

This MOSFET stands out with its high 800V voltage rating combined with low on-resistance, which reduces conduction losses compared to typical high-voltage MOSFETs. Its optimized gate charge ensures faster switching speeds and lower switching losses, enhancing energy efficiency in power conversion applications. The robust thermal rating and durable TO-220 package support reliable operation under industrial conditions, offering a balanced solution for engineers seeking efficiency and durability in high-voltage power electronics.

STF3LN80K5 Brand Info

The STF3LN80K5 is produced by STMicroelectronics, a global leader in semiconductor manufacturing. STMicroelectronics specializes in power MOSFETs designed for industrial and consumer electronics markets. This device is part of ST??s portfolio tailored for high voltage and high efficiency applications, benefiting from the brand??s expertise in innovative power management solutions and advanced fabrication technologies. The product is supported by comprehensive datasheets and application notes to facilitate integration and design optimization.

FAQ

What is the maximum voltage rating of the STF3LN80K5?

The device is rated for a maximum drain-source voltage of 800V, making it suitable for high-voltage switching applications such as power supplies and motor drives.

How does the gate charge affect switching performance?

The total gate charge of 22 nC allows the MOSFET

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