The STP7N60M2 is a high-voltage N-channel power MOSFET designed for industrial and consumer applications requiring efficient switching performance. With a voltage rating of 600V and a continuous drain current of 7A, it offers robust handling of power in demanding environments. Its low on-resistance minimizes conduction losses, enhancing system efficiency. This transistor is ideal for use in power supplies, motor control circuits, and lighting systems. Manufactured by IC Manufacturer, the device is optimized for fast switching and high reliability, making it a reliable choice for engineers and sourcing specialists seeking durable semiconductor components.
STP7N60M2 Technical Specifications
Parameter
Value
Unit
Drain-Source Voltage (VDS)
600
V
Continuous Drain Current (ID) at 25??C
7
A
Drain-Source On-Resistance (RDS(on))
0.75
??
Gate Threshold Voltage (VGS(th))
3 – 5
V
Maximum Gate-Source Voltage (VGS)
??20
V
Total Gate Charge (Qg)
28
nC
Power Dissipation (PD)
90
W
Operating Junction Temperature (Tj)
-55 to 150
??C
STP7N60M2 Key Features
High Voltage Handling: Rated for 600V drain-source voltage, enabling use in high-voltage switching applications such as power converters and motor drives.
Low On-Resistance: With an RDS(on) of 0.75??, it reduces conduction losses, improving overall energy efficiency and lowering thermal stress on the device.
Fast Switching Capability: Low total gate charge of 28nC ensures rapid switching speeds, which benefits high-frequency applications and enhances system responsiveness.
Wide Operating Temperature Range: Suitable for harsh environments, the device operates reliably from -55??C up to 150??C junction temperature.
Typical Applications
Switching power supplies requiring efficient high-voltage MOSFETs to achieve low power loss and thermal management in industrial and consumer electronics.
Motor control circuits where continuous current handling and fast switching contribute to precise speed and torque regulation.
Lighting ballasts and electronic dimmers, leveraging the device??s voltage and current capabilities for stable and efficient operation.
General purpose switching in inverter circuits, where reliability and power dissipation characteristics are critical for sustained performance.
STP7N60M2 Advantages vs Typical Alternatives
This power MOSFET provides an advantageous combination of high voltage rating and low on-resistance compared to typical alternatives, improving efficiency and reducing heat dissipation. Its fast switching and robust thermal performance make it a reliable choice for demanding industrial applications. The device’s gate threshold and maximum gate voltage specifications ensure ease of drive and compatibility with standard gate drivers, enhancing integration flexibility within power management systems.
The STP7N60M2 is part of the STMicroelectronics portfolio, a globally recognized semiconductor manufacturer known for high-quality power MOSFET solutions. STMicroelectronics specializes in advanced semiconductor technologies supporting industrial, automotive, and consumer applications. This device benefits from ST??s manufacturing expertise, ensuring consistent performance, reliability, and extensive technical support. ST??s commitment to innovation and quality positions the STP7N60M2 as a dependable component for engineers designing power electronics circuits.
