STD16NF06LT4 STMicroelectronics N-Channel MOSFET 60V 16A TO-220F Package

  • Acts as a high-efficiency N-channel MOSFET, enabling effective switching and power management.
  • Features a low on-resistance that reduces energy loss and improves overall circuit efficiency.
  • Encased in a compact package that saves valuable board space and simplifies thermal management.
  • Suitable for power supply and motor control applications, ensuring reliable performance under varying loads.
  • Designed to meet industry standards for durability and operational stability in diverse environments.
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STD16NF06LT4 Overview

The STD16NF06LT4 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in various electronic circuits. It features a low on-resistance and fast switching capabilities, making it suitable for industrial power management and motor control applications. This device delivers robust electrical characteristics optimized for high current handling and thermal stability within a compact package. Engineers and sourcing specialists can rely on this MOSFET for enhanced efficiency and reliability in demanding environments. For additional technical details and purchasing options, visit IC Manufacturer.

STD16NF06LT4 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)16A
Gate Threshold Voltage (VGS(th))1 – 3V
On-Resistance (RDS(on))?? 0.047??
Total Gate Charge (Qg)30nC
Power Dissipation (PD)80W
Operating Temperature Range-55 to +150??C
Gate-Source Voltage (VGS)??20V

STD16NF06LT4 Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation.
  • High Continuous Drain Current: Supports up to 16A, enabling reliable operation in high-current applications.
  • Fast Switching Speed: Reduces switching losses, improving performance in PWM and switching power supplies.
  • Wide Operating Temperature Range: Ensures stable performance under harsh thermal environments.
  • Robust Gate Reliability: High gate-source voltage tolerance protects against voltage spikes and enhances device longevity.

Typical Applications

  • DC-DC converters and power management circuits requiring efficient high-current MOSFETs to improve energy conversion rates.
  • Motor control systems where fast switching and low conduction losses are critical for performance and thermal management.
  • Battery-powered devices needing reliable switching elements with low power dissipation for extended operation time.
  • Industrial automation and control equipment demanding rugged semiconductor components with wide temperature tolerance.

STD16NF06LT4 Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of low on-resistance and high current capability, which translates into reduced power loss and improved thermal performance compared to typical alternatives. Its fast switching characteristics also contribute to higher efficiency in PWM-driven applications. The wide operating temperature range and robust gate voltage tolerance make it more reliable in demanding industrial environments, ensuring long-term stability and reduced maintenance.

STD16NF06LT4 Brand Info

The STD16NF06LT4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in high-quality power MOSFETs designed for industrial, automotive, and consumer electronics markets. The company??s commitment to innovation and reliability ensures that this MOSFET meets strict quality standards and delivers consistent performance for engineers and system integrators worldwide.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (VDS) rating is 60 volts, allowing it to handle voltage stresses commonly found in medium-power applications without breakdown.

How does the low on-resistance affect device performance?

Low on-resistance reduces conduction losses during operation, which directly improves energy efficiency and lowers heat generation. This makes

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