STD11N50M2 Overview
The STD11N50M2 is a high-voltage N-channel power MOSFET designed for robust switching and amplification tasks in industrial and automotive applications. With a maximum drain-source voltage rating of 500V and a continuous drain current of 11A, this device delivers reliable performance in demanding environments. Its low on-resistance and fast switching capabilities contribute to increased efficiency and reduced power loss, making it suitable for power management, motor control, and high-voltage converter circuits. The STD11N50M2 ensures enhanced thermal stability and durability, supporting long-term operational reliability. For detailed product data and purchasing options, visit IC Manufacturer.
STD11N50M2 Technical Specifications
| Parameter | Specification |
|---|---|
| Drain-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) @ 25??C | 11 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| On-Resistance (RDS(on)) @ VGS=10V | 0.55 ?? |
| Maximum Gate-Source Voltage (VGS) | ??20 V |
| Total Gate Charge (Qg) | 34 nC |
| Power Dissipation (PD) | 75 W |
| Operating Junction Temperature Range | -55??C to +150??C |
STD11N50M2 Key Features
- High voltage rating: Supports up to 500V drain-source voltage, enabling use in high-voltage power supplies and industrial equipment.
- Low on-resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- Robust current handling: 11A continuous drain current allows reliable operation in demanding load conditions and motor drive applications.
- Fast switching capability: Enables efficient power conversion and reduced switching losses in high-frequency circuits.
- Wide operating temperature: Functional from -55??C to +150??C, suitable for harsh industrial and automotive environments.
- Stable gate threshold voltage: Ensures predictable switching behavior and reduces risk of false triggering.
- Compact TO-220 package: Facilitates easy mounting and effective heat dissipation for enhanced reliability.
Typical Applications
- Switched-mode power supplies (SMPS) requiring high voltage and low conduction losses for improved energy efficiency and compact design.
- Motor control circuits in industrial automation systems where reliable switching and thermal stability are critical.
- High-voltage DC-DC converters used in telecommunications and renewable energy inverters.
- Power management in automotive electronics where ruggedness and long-term reliability are essential.
STD11N50M2 Advantages vs Typical Alternatives
This device offers a balanced combination of high voltage capability and low on-resistance, outperforming many alternatives in efficiency and thermal performance. Its reliable current rating and fast switching reduce power loss and system heat, enhancing longevity and reducing cooling requirements. Compared to typical MOSFETs, the STD11N50M2 provides consistent threshold voltage and robust packaging, ensuring dependable operation in harsh industrial and automotive environments.
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STD11N50M2 Brand Info
The STD11N50M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its high-quality power MOSFETs designed for industrial, automotive, and consumer applications. This specific model is part of their extensive portfolio of discrete power transistors, emphasizing reliability, efficiency, and ease of integration. ST’s commitment to innovation ensures the product complies with stringent quality standards and offers excellent support for system designers.
FAQ
What is the maximum operating voltage of the STD11N50M2?
The maximum drain-source voltage (VDS) rating is 500 volts, making it suitable for high-voltage applications such as power supplies and motor drives.
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How much current can the device handle continuously?
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|






