STN1HNK60 Overview
The STN1HNK60 is a high-performance N-channel MOSFET designed for efficient power switching and high-voltage applications. Featuring a low on-resistance and robust avalanche energy capability, this device ensures reliable operation in demanding industrial environments. Its compact package supports optimized thermal management and enhanced integration into power conversion systems. Ideal for engineers and sourcing specialists focused on maximizing efficiency and durability, the STN1HNK60 offers a balanced solution for power management challenges. For detailed technical insights and procurement, visit IC Manufacturer.
STN1HNK60 Technical Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 12 A |
| On-Resistance (RDS(on)) | 0.18 ?? @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0?C4.0 V |
| Total Gate Charge (Qg) | 30 nC |
| Drain-Source Diode Recovery Time | 110 ns |
| Maximum Power Dissipation (PD) | 150 W |
| Operating Junction Temperature (TJ) | -55 to +150 ??C |
STN1HNK60 Key Features
- Low On-Resistance: Provides reduced conduction losses, improving system efficiency and thermal performance during high-current switching operations.
- High Voltage Rating: Supports up to 600 V drain-source voltage, enabling use in a wide range of industrial power applications requiring robust voltage handling.
- Fast Switching Capability: Minimizes switching losses with low gate charge and quick recovery diode, enhancing overall power conversion speed and efficiency.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments with junction temperatures from -55 ??C to +150 ??C.
Typical Applications
- Industrial motor drives and power converters requiring efficient high-voltage MOSFETs for switching and control tasks, ensuring reliable operation under heavy load conditions.
- Switch-mode power supplies (SMPS) where low on-resistance and fast switching reduce power loss and improve overall energy efficiency.
- Solar inverters benefiting from the device??s ability to handle high voltage and current, optimizing energy conversion in renewable energy systems.
- Uninterruptible Power Supplies (UPS), providing dependable power switching and protection during critical power backup scenarios.
STN1HNK60 Advantages vs Typical Alternatives
This MOSFET stands out with its combination of low on-resistance and high voltage capability, which reduces conduction and switching losses compared to typical alternatives. Its robust avalanche energy rating enhances reliability in demanding environments. Additionally, the fast recovery diode and moderate gate charge improve switching efficiency, enabling designers to optimize power density and thermal management in industrial applications.
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STN1HNK60 Brand Info
The STN1HNK60 is manufactured by STMicroelectronics, a leading global semiconductor company known for delivering innovative power management solutions. STMicroelectronics specializes in high-quality discrete components and power devices that support diverse industrial, automotive, and consumer electronics markets. Their products emphasize efficiency, reliability, and ease of integration, making the STN1HNK60 a trusted choice for engineers seeking proven MOSFET technology.
FAQ
What is the maximum voltage rating of the STN1HNK60?
The device supports a maximum drain-source voltage of 600 V, making it suitable for high-voltage applications such as industrial power supplies and motor control systems.
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How does the on-resistance affect performance in power applications?
Lower on-resistance reduces conduction losses during operation, which improves efficiency, reduces heat generation, and increases the overall reliability of power switching circuits.
What package type is the STN1HNK60 available in?
This MOSFET is typically offered in a compact package designed to optimize thermal dissipation and facilitate integration into space-constrained power modules.






