STD1NK80ZT4 Toshiba IGBT Module, High-Power Switching, 4-Pin Package

STD1NK80ZT4 Overview

The STD1NK80ZT4 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and consumer electronics. Featuring a low on-resistance and high voltage rating, it delivers reliable operation in demanding applications such as power management and motor control. Its compact TO-220 package enables easy integration and effective thermal dissipation. This robust transistor offers enhanced switching speeds and minimal conduction losses, making it ideal for engineers seeking dependable semiconductor solutions. For detailed technical support and sourcing, visit IC Manufacturer.

STD1NK80ZT4 Technical Specifications

STD1NK80ZT4 Key Features

• Low On-Resistance: Minimizes conduction losses, improving overall efficiency and reducing heat generation during switching operations.
• High Voltage Rating (80V): Supports robust performance in various power electronics circuits, ensuring reliable operation under high voltage stress.
• Fast Switching Speed: Enables efficient power conversion and control, critical for high-frequency switching applications like DC-DC converters and motor drives.
• Thermally Efficient TO-220 Package: Facilitates excellent heat dissipation, allowing higher power handling and enhanced device longevity in demanding environments.

Typical Applications

• Power supply circuits requiring efficient switching elements, such as DC-DC converters and voltage regulators, benefit from this device??s low R_DS(on) and fast switching capabilities.
• Motor control systems leverage its high current rating and thermal management for reliable operation under dynamic load conditions.
• Battery protection and management circuits use this MOSFET for its robust voltage handling and precise gate threshold voltage.
• Industrial automation equipment integrates this transistor to ensure efficient power switching and extended operational life in harsh conditions.

STD1NK80ZT4 Advantages vs Typical Alternatives

This MOSFET offers a compelling balance of low on-resistance and high voltage tolerance, resulting in improved efficiency compared to typical alternatives with higher conduction losses. Its fast switching speed reduces power dissipation, enhancing overall system reliability. The thermally optimized TO-220 package ensures superior heat management, making this device well-suited for high-current industrial applications where durability and performance are critical.

STD1NK80ZT4 Brand Info

The STD1NK80ZT4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions renowned for innovation and quality. STMicroelectronics specializes in power management devices, including MOSFETs designed for industrial and automotive markets. This product line emphasizes reliability and performance, supported by extensive technical documentation and global customer support, ensuring seamless integration across diverse applications.

FAQ

What is the maximum drain-source voltage rating for this MOSFET?

The maximum drain-source voltage (V_DS) rating is 80 volts, making it suitable for applications that require moderate to high voltage handling capabilities without compromising device integrity.