STL120N8F7 N-Channel MOSFET Transistor – 8V, 120A, TO-220 Package by STMicroelectronics

  • STL120N8F7 serves as a robust power transistor, enabling efficient switching in electronic circuits.
  • Its low on-resistance reduces power loss, enhancing overall device efficiency during operation.
  • The compact package design allows for board-space savings in densely populated electronic assemblies.
  • Ideal for motor control applications, it helps maintain stable performance under varying load conditions.
  • Manufactured with quality standards that ensure consistent reliability and long-term operational stability.
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STL120N8F7 Overview

The STL120N8F7 is a high-performance N-channel MOSFET designed for efficient power switching and low conduction loss applications. Featuring a maximum drain-to-source voltage of 80V and a continuous drain current of up to 120A, this device is ideal for power management in industrial and automotive systems. Its low on-resistance ensures minimal power dissipation, enhancing overall system efficiency. With fast switching capabilities and robust thermal performance, the STL120N8F7 supports demanding environments and high-frequency operations. For detailed technical support and sourcing, visit IC Manufacturer.

STL120N8F7 Technical Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 80 V
Continuous Drain Current (ID) @ 25??C 120 A
Gate Threshold Voltage (VGS(th)) 2.0 – 4.0 V
Maximum Gate Voltage (VGS) ??20 V
Static Drain-Source On-Resistance (RDS(on)) 1.2 m??
Total Gate Charge (Qg) 42 nC
Power Dissipation (PD) 300 W
Operating Junction Temperature (Tj) -55 to +175 ??C
Package Type TO-220 Full Pack

STL120N8F7 Key Features

  • Low On-Resistance: Minimizes conduction losses, improving energy efficiency and reducing thermal stress in power circuits.
  • High Current Handling: Supports continuous drain current up to 120A, enabling robust performance in high-power applications.
  • Wide Operating Temperature Range: Reliable operation from -55??C to 175??C, suitable for harsh industrial and automotive environments.
  • Fast Switching Capability: Low gate charge ensures rapid switching transitions, enhancing performance in PWM and switching power supplies.

Typical Applications

  • DC/DC converters and voltage regulators requiring efficient high-current switching with low thermal losses.
  • Industrial motor control circuits where high current capacity and robust switching are essential.
  • Automotive power management systems including battery protection and power distribution modules.
  • Power management in server and telecom equipment demanding high reliability and fast switching.

STL120N8F7 Advantages vs Typical Alternatives

This MOSFET offers a competitive edge through its low RDS(on) and high current rating, enabling improved efficiency and reduced heat generation compared to typical alternatives. Its wide temperature tolerance and robust packaging enhance reliability in challenging environments. Fast switching characteristics also allow for optimized system performance in power-conversion applications, making it a preferred choice for engineers seeking balance between power density and thermal management.

STL120N8F7 Brand Info

The STL120N8F7 is produced by STMicroelectronics, a global leader in semiconductor solutions. Known for its innovative power management devices, STMicroelectronics provides this MOSFET with industry-standard quality and support. The product is part of ST??s comprehensive portfolio of discrete power MOSFETs designed for automotive, industrial, and consumer electronics markets, ensuring compatibility with a wide range of applications requiring high efficiency and reliability.

FAQ

What is the maximum voltage rating for this MOSFET?

The device supports a maximum drain-to-source voltage (VDS

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