STN4NF06L N-Channel MOSFET 60V 4.5A Transistor in TO-252 Package ?C STMicroelectronics

  • Functions as a power MOSFET, enabling efficient switching and control in electronic circuits.
  • Features a low on-resistance, improving energy efficiency and reducing heat generation during operation.
  • Comes in a compact package that saves board space and simplifies integration in dense layouts.
  • Suitable for use in power management systems, enhancing performance in voltage regulation tasks.
  • Designed to meet industry standards for reliability, ensuring stable operation under varying conditions.
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STN4NF06L Overview

The STN4NF06L is a high-performance N-channel MOSFET designed for efficient switching and low conduction losses in power management applications. Featuring a low gate charge and fast switching speeds, this device is well-suited for switching regulators, load switches, and motor control circuits. Its rugged design supports operation at voltages up to 60 V and continuous drain currents up to 4 A, ensuring reliable performance in industrial and consumer electronic systems. The STN4NF06L combines robust electrical characteristics with a compact package, making it ideal for space-constrained designs. For more detailed information, visit the IC Manufacturer.

STN4NF06L Technical Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)60V
Continuous Drain Current (Id) @ 25??C4A
Gate Threshold Voltage (Vgs(th))1 to 2.5V
Drain-Source On Resistance (Rds(on)) @ Vgs=4.5V0.045??
Total Gate Charge (Qg)10nC
Input Capacitance (Ciss)200pF
Power Dissipation (Pd)1.25W
Operating Temperature Range-55 to 150??C

STN4NF06L Key Features

  • Low On-Resistance: Minimizes conduction losses, improving energy efficiency in power switching applications.
  • Fast Switching Speed: Supports high-frequency operation, enabling compact and responsive circuit designs.
  • High Voltage Rating: Withstands up to 60 V drain-source voltage, suitable for a broad range of industrial and automotive applications.
  • Compact Package: Small footprint facilitates integration into space-limited PCBs without compromising performance.

Typical Applications

  • DC-DC converters and switching regulators, where efficient power transfer and thermal management are critical for performance and reliability.
  • Load switching and power distribution circuits requiring low Rds(on) and fast response to optimize battery life and system control.
  • Motor control systems in industrial automation, benefiting from robust voltage rating and efficient switching characteristics.
  • Consumer electronics power management, offering compact, efficient, and reliable MOSFET solutions for portable devices.

STN4NF06L Advantages vs Typical Alternatives

This MOSFET offers a compelling balance of low on-resistance and high voltage capability, delivering improved efficiency compared to typical alternatives. Its reduced gate charge enhances switching speed and lowers power loss, making it ideal for high-frequency applications. Additionally, the device??s compact form factor supports integration in dense PCB layouts without sacrificing performance or reliability, providing a robust solution for demanding industrial and consumer electronics environments.

STN4NF06L Brand Info

The STN4NF06L is manufactured by STMicroelectronics, a global leader in semiconductor solutions known for its innovation and quality. STMicroelectronics specializes in power MOSFETs that deliver high efficiency and reliability for a variety of applications, including automotive, industrial, and consumer electronics. The STN4NF06L exemplifies the company??s commitment to advanced power management technologies, combining rugged design with optimized electrical characteristics to meet evolving market demands.

FAQ

What is the maximum voltage the STN4NF06L can handle?

The device supports a maximum drain-source voltage of 60 V, making it suitable for a wide range of medium-voltage power switching applications in industrial and automotive environments.

How does the low on-resistance benefit circuit efficiency?

Low on-resistance reduces conduction losses when the MOSFET is in the ??on

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