STS8N6LF6AG Overview
The STS8N6LF6AG is a high-performance N-channel MOSFET designed for efficient power switching in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, it enables energy-efficient operation and thermal management in compact systems. This device supports a maximum drain-source voltage of 60V and a continuous drain current rating suitable for medium-power applications. Its optimized gate charge and rugged construction ensure reliable performance in demanding environments. The STS8N6LF6AG is ideal for power management, DC-DC converters, and load switching, delivering enhanced efficiency and simplified board integration. For more details, visit IC Manufacturer.
STS8N6LF6AG Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Continuous Drain Current (ID) | 8 | A |
| On-Resistance (RDS(on)) at VGS=10V | 6.5 | m?? |
| Gate Threshold Voltage (VGS(th)) | 1.0 – 2.5 | V |
| Total Gate Charge (Qg) | 14 | nC |
| Gate-Source Charge (Qgs) | 4.5 | nC |
| Drain-Source Diode Forward Voltage (VSD) | 1.5 | V |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
STS8N6LF6AG Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency and reducing heat generation in switching applications.
- High Current Capability: Supports continuous drain current up to 8A, enabling reliable operation in medium-power circuits and load switching.
- Fast Switching Performance: Optimized gate charge parameters reduce switching losses and enable high-frequency operation for DC-DC converters.
- Robust Thermal Range: Wide operating junction temperature range (-55??C to 150??C) ensures stable performance in harsh industrial environments.
Typical Applications
- Power management in industrial electronic systems where efficient switching and thermal management are critical to system reliability.
- DC-DC converters requiring fast switching speeds and low conduction losses for improved power conversion efficiency.
- Load switching in automotive and consumer electronics, providing controlled power distribution with minimal energy loss.
- Battery management systems that benefit from low gate charge and robust threshold voltage, ensuring precise control over charging and discharging cycles.
STS8N6LF6AG Advantages vs Typical Alternatives
This MOSFET stands out due to its low on-resistance and high current rating, which together reduce power dissipation compared to typical alternatives. Its fast switching characteristics lower switching losses, enhancing efficiency in high-frequency applications. The wide operating temperature range and reliable gate threshold voltage improve device stability and system longevity, making it a preferred choice for industrial power management solutions.
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STS8N6LF6AG Brand Info
The STS8N6LF6AG is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovation and quality, STMicroelectronics delivers devices optimized for power efficiency and reliability. This product is part of their MOSFET portfolio designed to meet the rigorous demands of industrial and automotive applications, combining advanced silicon technology with robust packaging to ensure superior performance in harsh conditions.
FAQ
What is the maximum voltage rating for the STS8N6LF6AG?
The device supports a maximum drain-source voltage of 60V, making it suitable for a wide range of medium-voltage applications in power management and switching circuits.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses when the transistor is conducting current, which improves efficiency and reduces heat generation, essential for energy-saving designs
