STT6N3LLH6 Overview
The STT6N3LLH6 is a high-performance N-channel MOSFET designed for efficient switching and power management in industrial and consumer electronics. Offering a low RDS(on) and optimized gate charge, this device ensures reduced conduction and switching losses, improving overall system efficiency. Its robust design supports high current handling with reliable thermal performance, making it suitable for applications requiring compact power solutions. Engineered with advanced semiconductor technology, the STT6N3LLH6 meets rigorous quality standards, delivering consistent performance in demanding environments. For more detailed information, visit the IC Manufacturer.
STT6N3LLH6 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | N-channel MOSFET | ?C |
| Drain-Source Voltage (VDS) | 30 | V |
| Continuous Drain Current (ID) | 6.2 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 | V |
| RDS(on) (Max) at VGS = 4.5 V | 6.0 | m?? |
| Total Gate Charge (Qg) | 10 | nC |
| Input Capacitance (Ciss) | 320 | pF |
| Package | SO-8 | ?C |
| Operating Temperature Range | -55 to +150 | ??C |
STT6N3LLH6 Key Features
- Low RDS(on) Resistance: Minimizes conduction losses, enhancing energy efficiency in power switching applications.
- High Current Capability: Supports continuous drain current up to 6.2 A, suitable for moderate power loads with high reliability.
- Optimized Gate Charge: Allows fast switching speeds with minimal drive power, reducing overall system power consumption.
- Compact SO-8 Package: Facilitates easy PCB integration and effective thermal dissipation in space-constrained designs.
Typical Applications
- DC-DC converters requiring efficient low-voltage switching with reduced power dissipation and reliable thermal management.
- Load switching circuits in industrial and consumer electronic equipment.
- Battery management and protection circuits, ensuring accurate control of current flow.
- Motor drive controllers for small to medium-sized motors in automation systems.
STT6N3LLH6 Advantages vs Typical Alternatives
This MOSFET offers a competitive advantage through its low RDS(on) and moderate gate charge, delivering efficient switching performance with reduced power loss. Compared to typical alternatives, it provides enhanced current handling and thermal stability in a compact SO-8 package, making it ideal for space-constrained and energy-efficient designs. Its threshold voltage range ensures reliable operation while maintaining sensitivity to control signals.
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STT6N3LLH6 Brand Info
The STT6N3LLH6 is manufactured by STMicroelectronics, a leading global semiconductor company known for innovative power management solutions. STMicroelectronics specializes in MOSFETs optimized for industrial and consumer applications, balancing performance, efficiency, and reliability. This device is part of their wide portfolio addressing low-voltage power switching needs, backed by ST??s commitment to quality and extensive technical support worldwide.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The maximum drain-source voltage (VDS) for this device is 30 volts, making it suitable for low-voltage switching applications where efficient control of moderate voltages is required.
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How does the RDS(on) value affect device performance?
The RDS(on) value represents the resistance between the drain and source when the MOSFET is
