STMicroelectronics STY50N105DK5 IGBT Transistor – 50A 1000V, TO-247 Package

  • Functions as a high-efficiency power MOSFET, enabling effective switching and energy control in electronic circuits.
  • Features a robust voltage rating suitable for handling demanding power levels, ensuring safe operation under load stress.
  • Encased in a compact package type that allows for reduced board space and easier integration into dense designs.
  • Ideal for use in power management modules, improving overall system efficiency and thermal performance in embedded devices.
  • Manufactured to meet strict quality standards, providing consistent performance and durability in various operating conditions.
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STY50N105DK5 Overview

The STY50N105DK5 is a high-voltage N-channel MOSFET designed for robust power switching applications. With a maximum drain-source voltage rating of 1000V and a continuous drain current capability of 50A, it supports demanding industrial and power electronics environments. This device features a low on-resistance of 0.5??, enabling efficient conduction and reduced power losses. Its TO-247 package ensures effective heat dissipation and ease of assembly in power modules. Ideal for switching, motor control, and power conversion tasks, this MOSFET delivers reliability and performance for engineers seeking dependable semiconductor solutions. For detailed specifications and purchasing, visit IC Manufacturer.

STY50N105DK5 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)1000V
Continuous Drain Current (ID) at 25??C50A
On-Resistance (RDS(on)) at VGS = 10 V0.5??
Gate Threshold Voltage (VGS(th))3.0?C5.0V
Maximum Gate-Source Voltage (VGS)??20V
Total Gate Charge (Qg)180nC
Power Dissipation (PD)250W
Operating Junction Temperature-55 to 150??C

STY50N105DK5 Key Features

  • High Voltage Rating: Supports up to 1000V drain-source voltage, enabling use in high-voltage power systems and industrial drives.
  • Low On-Resistance: 0.5?? on-resistance minimizes conduction losses, improving overall system efficiency and thermal performance.
  • Robust Current Handling: 50A continuous drain current at 25??C suits heavy load applications with reliable current conduction capability.
  • TO-247 Package: Provides excellent thermal dissipation and mechanical stability for high-power switching circuits.
  • Wide Operating Temperature Range: Operates reliably from -55??C to 150??C, making it suitable for harsh industrial environments.
  • Gate Charge Optimization: 180 nC total gate charge balances switching speed and drive power requirements for efficient gate control.

Typical Applications

  • High-voltage power converters and inverters in renewable energy systems, enabling efficient DC-AC conversion under elevated voltage conditions.
  • Industrial motor drives requiring reliable high-current switching for precise motor control and energy savings.
  • Switch-mode power supplies (SMPS) where high voltage and current ratings ensure robust performance in power regulation.
  • Uninterruptible power supplies (UPS) and battery management systems demanding dependable power switching with thermal resilience.

STY50N105DK5 Advantages vs Typical Alternatives

This MOSFET offers a compelling combination of high voltage and current capability with low on-resistance, resulting in lower conduction losses and improved efficiency compared to typical devices in the same class. Its robust TO-247 package enhances thermal management, increasing reliability under high power operation. The device’s wide operating temperature range and optimized gate charge further contribute to system stability and ease of integration, positioning it as a strong choice versus standard high-voltage MOSFETs.

STY50N105DK5 Brand Info

The STY50N105DK5 is produced by STMicroelectronics, a leading global semiconductor manufacturer known for innovative power management solutions. STMicroelectronics specializes in power MOSF

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