STMicroelectronics STY60NM60 IGBT Transistor 60A 600V TO-247 Package

  • Functions as a high-speed power MOSFET, enabling efficient switching in power control circuits.
  • Features a low on-resistance, reducing conduction losses and improving overall energy efficiency.
  • Encased in a compact package that supports board-space savings and simplifies thermal management.
  • Ideal for use in motor drives where fast switching and reliable operation enhance system performance.
  • Designed to meet rigorous quality standards ensuring consistent performance under various operating conditions.
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STY60NM60 Overview

The STY60NM60 is a high-performance 600V N-channel MOSFET designed for industrial power applications requiring efficient switching and robust thermal management. It offers a low on-resistance combined with a high continuous drain current capability, making it suitable for power conversion, motor control, and switching power supplies. This device enables engineers to achieve enhanced efficiency and reliability in demanding environments. For detailed technical data and sourcing, visit IC Manufacturer.

STY60NM60 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Continuous Drain Current (ID) @ 25??C60A
Drain-Source On-Resistance (RDS(on))0.11??
Gate Threshold Voltage (VGS(th))2.0?C4.0V
Gate-Source Voltage (VGS)??20V
Total Gate Charge (Qg)52nC
Maximum Power Dissipation (PD)250W
Junction Temperature (Tj)-55 to 150??C

STY60NM60 Key Features

  • High voltage rating: The 600V drain-source voltage enables use in high-voltage power switching, providing flexibility for industrial power designs.
  • Low on-resistance: With an RDS(on) of 0.11 ??, this MOSFET reduces conduction losses, improving overall energy efficiency in power circuits.
  • Robust thermal handling: Capable of dissipating up to 250W, it ensures reliable operation under high load and elevated temperature conditions.
  • Fast switching capability: The moderate total gate charge supports efficient switching speeds, enhancing performance in PWM and inverter applications.

Typical Applications

  • Power conversion circuits such as DC-DC converters and AC-DC power supplies, where high voltage and current handling are critical for energy-efficient operation.
  • Motor control systems requiring reliable high-current switching to drive industrial motors with precision and durability.
  • Switching regulators that demand low on-resistance devices to minimize power loss and heat generation in high-frequency switching environments.
  • Industrial automation equipment that benefits from robust, high-voltage MOSFETs to maintain system stability and reduce maintenance needs.

STY60NM60 Advantages vs Typical Alternatives

This MOSFET stands out for its combination of a 600V rating and low on-resistance, offering a balance of high voltage capability and efficiency. Compared to typical alternatives, it delivers superior thermal dissipation and reliable high current handling. This improves system robustness and reduces power losses, making it a preferred choice for demanding industrial power applications.

STY60NM60 Brand Info

The STY60NM60 is a product from STMicroelectronics, a leading global semiconductor manufacturer renowned for advanced power transistor technologies. STMicroelectronics specializes in delivering high-quality MOSFETs optimized for industrial and automotive power management. This device is part of their portfolio targeting energy-efficient and rugged power solutions, ensuring quality, long-term availability, and technical support for industrial engineers and sourcing professionals.

FAQ

What is the maximum voltage the STY60NM60 can withstand?

The device is rated for a maximum drain-source voltage of 600 volts, making it suitable for high-voltage applications such as industrial power supplies and motor drives where voltage spikes are common.

How does the on-resistance of this MOSFET affect system efficiency?

Lower on-resistance reduces conduction losses during operation, which improves overall power efficiency and reduces heat generation. The 0.11 ?? RDS(on) of this MOSFET helps maintain efficient energy conversion in switching applications.

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