STY60NK30Z Overview
The STY60NK30Z is a high-power N-channel MOSFET designed for industrial and automotive applications where robust switching performance is critical. Featuring a maximum drain-to-source voltage of 300V and a continuous drain current rating of 60A, it supports demanding power management tasks with excellent efficiency and thermal stability. Its low on-resistance minimizes conduction losses, enhancing system reliability and energy savings. The device??s TO-220 package facilitates effective heat dissipation and ease of integration into existing power electronics designs. For sourcing and detailed technical support, visit IC Manufacturer.
STY60NK30Z Technical Specifications
| Parameter | Specification |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 300 V |
| Continuous Drain Current (ID) | 60 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.085 ?? at VGS = 10 V |
| Maximum Power Dissipation (PD) | 150 W |
| Gate Charge (Qg) | Approx. 110 nC |
| Package | TO-220 |
| Operating Junction Temperature (Tj) | -55 to 150 ??C |
STY60NK30Z Key Features
- High voltage rating: Supports up to 300V, enabling reliable operation in high-voltage power switching environments.
- Low on-resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High continuous current: Handles 60A drain current for demanding load conditions, supporting robust power delivery.
- Thermal performance: TO-220 package ensures effective heat dissipation, enhancing device reliability under continuous operation.
Typical Applications
- Power supply units and DC-DC converters where efficient high-voltage switching is essential for performance and energy savings.
- Motor control circuits requiring high current capability and fast switching for precise speed and torque management.
- Industrial automation systems needing rugged devices capable of withstanding high voltages and thermal stress during operation.
- Automotive electronics including battery management and power distribution modules that benefit from low losses and reliable switching.
STY60NK30Z Advantages vs Typical Alternatives
This MOSFET offers a compelling balance of high voltage capability and low on-resistance, reducing power losses compared to typical alternatives. Its ability to conduct up to 60A continuously, combined with robust thermal handling in a standard TO-220 package, ensures improved reliability and performance in harsh industrial and automotive environments. These features translate to longer device life and more efficient power management within complex electronic systems.
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STY60NK30Z Brand Info
The STY60NK30Z is manufactured by STMicroelectronics, a leading global semiconductor company known for innovation in power management and automotive-grade components. STMicroelectronics?? portfolio includes a wide range of MOSFETs designed for high efficiency and reliability in industrial, automotive, and consumer electronics. The STY60NK30Z exemplifies ST??s commitment to delivering high-performance discrete devices with proven ruggedness and thermal management for demanding applications.
FAQ
What is the maximum drain-to-source voltage for this MOSFET?
The device is rated for a maximum drain-to-source voltage of 300V, making it suitable for high-voltage switching applications commonly found in industrial and automotive systems.
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How does the on-resistance affect device performance?
A low static drain-source on-resistance of 0.085 ?? at 10 V gate drive reduces power losses during
