STB20N95K5 Toshiba IGBT Transistor Module – High Power, 3-Pin Package

  • This component serves as a high-voltage transistor, enabling efficient switching in power control circuits.
  • With a notable voltage rating, it ensures safe operation under demanding electrical conditions.
  • The package design offers a compact footprint, aiding in optimized board layout and space savings.
  • Ideal for use in power converters where precise current regulation improves overall system performance.
  • Manufactured under stringent quality protocols, it delivers consistent performance and long-term reliability.
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STB20N95K5 Overview

The STB20N95K5 is a high-voltage N-channel MOSFET designed for industrial power switching applications requiring robust performance and high efficiency. With a maximum drain-source voltage of 950 V and a continuous drain current rating of 20 A, it offers reliable operation in demanding environments. This device features low on-resistance and fast switching capabilities, making it suitable for power conversion, motor control, and energy management systems. Engineered for ease of integration and thermal stability, the STB20N95K5 supports optimized system efficiency while maintaining durability under high-stress conditions. For detailed specifications and application guidelines, visit IC Manufacturer.

STB20N95K5 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)950V
Continuous Drain Current (ID) @25??C20A
Drain-Source On-Resistance (RDS(on))0.22??
Gate Threshold Voltage (VGS(th))3.0 ?C 5.0V
Gate Charge (Qg)50nC
Power Dissipation (PD)150W
Operating Junction Temperature (TJ)-55 to 150??C
Package TypeTO-247?C

STB20N95K5 Key Features

  • High Voltage Handling: With a 950 V maximum drain-source voltage, this MOSFET supports high-voltage industrial power applications safely and efficiently.
  • Low On-Resistance: The low RDS(on) of 0.22 ?? minimizes conduction losses, improving overall system efficiency and thermal performance.
  • Fast Switching Speed: Optimized gate charge enables rapid switching, which reduces switching losses and enhances performance in high-frequency converters.
  • Robust Thermal Capacity: The device supports power dissipation up to 150 W and operates reliably across a wide temperature range, ensuring durability in harsh environments.

Typical Applications

  • Power conversion circuits including DC-DC converters and power factor correction stages, where high voltage and efficiency are critical for system performance.
  • Industrial motor drives that require robust and efficient switching components to handle inductive loads and high currents.
  • Renewable energy systems such as solar inverters and wind turbine converters, leveraging the high voltage rating and low losses for optimized energy management.
  • Switching power supplies in industrial equipment, where reliable high-voltage MOSFETs are essential for stable, long-term operation.

STB20N95K5 Advantages vs Typical Alternatives

This MOSFET offers superior performance through its combination of high voltage tolerance and low on-resistance, reducing power losses and thermal stress compared to typical alternatives. Its fast switching capability enhances efficiency in power conversion, making it ideal for demanding industrial applications. The robust thermal management and wide operating temperature range improve reliability and longevity, providing engineers with a dependable solution that integrates seamlessly into high-power systems.

STB20N95K5 Brand Info

The STB20N95K5 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in power management devices, offering products that deliver efficiency, reliability, and scalability. This particular MOSFET is part of ST??s portfolio targeting industrial power electronics, emphasizing high voltage ratings and robust performance. The device??s TO-247 package facilitates easy mounting and effective heat dissipation, aligning with ST??s commitment to supporting advanced power system designs.

FAQ

What is the maximum voltage rating of this MOSFET?

The device supports a maximum drain-source voltage of 950 V, making it suitable for high-voltage industrial applications including power conversion and motor control.

How does the on-resistance impact the device

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