STH315N10F7-6 IGBT Transistor 100A 600V TO-247 Package by STMicroelectronics

STH315N10F7-6 Overview

The STH315N10F7-6 is a high-performance N-channel power MOSFET designed for efficient switching and power management in industrial and automotive applications. Featuring a low on-resistance and high current handling capability, this device ensures minimal conduction losses and improved thermal performance. Its rugged construction supports high-speed switching with excellent avalanche energy capability, making it ideal for use in DC-DC converters, motor drivers, and power supplies. Sourced from a reputable manufacturer, the STH315N10F7-6 combines reliability with compact packaging to optimize system integration and enhance overall efficiency. For detailed information, visit IC Manufacturer.

STH315N10F7-6 Technical Specifications

STH315N10F7-6 Key Features

• Low On-Resistance: At just 6.5 m??, this MOSFET minimizes conduction losses, enabling higher efficiency in power conversion circuits.
• High Continuous Drain Current: Supports up to 31.5 A, allowing operation in demanding load conditions without performance degradation.
• Robust Thermal Handling: Can operate up to 175??C junction temperature, enhancing reliability in high-temperature environments.
• Fast Switching Capability: The moderate total gate charge of 44 nC enables quick transitions, reducing switching losses and improving overall system efficiency.

Typical Applications

• DC-DC Converters: Ideal for synchronous rectification and switching tasks in power supply modules requiring high efficiency and low losses.
• Motor Control: Suitable for driving motors in automotive and industrial equipment, where high current and fast switching are critical.
• Battery Management Systems: Provides reliable switching performance for charging, discharging, and protection circuits.
• Power Management in Consumer Electronics: Enables compact and efficient power regulation in devices requiring stable voltage and current control.

STH315N10F7-6 Advantages vs Typical Alternatives

This MOSFET stands out due to its low on-resistance and high current handling, reducing power dissipation compared to typical alternatives. Its wide operating temperature range and robust avalanche energy capability enhance reliability under harsh conditions. The device??s balanced gate charge ensures faster switching speeds without excessive drive power, making it an optimal choice for efficient and compact power electronics designs.

STH315N10F7-6 Brand Info

The STH315N10F7-6 is manufactured by STMicroelectronics, a leading global semiconductor company known for innovative power management solutions. STMicroelectronics specializes in high-quality MOSFETs widely used in automotive, industrial, and consumer applications. This product line reflects the brand??s commitment to reliability, performance, and energy efficiency, supported by global technical support and extensive application documentation.

FAQ

What is the maximum voltage rating of the STH315N10F7-6?

The device supports a maximum drain-source voltage of 100 V, making it suitable for a wide range of industrial and automotive applications requiring medium voltage handling capability.

How does the on-resistance impact device performance?

Lower on-resistance reduces conduction losses during operation, improving efficiency