STTH60N099DM9-2AG High-Speed Rectifier Diode 60A 900V DO-220AB Package – STMicroelectronics

  • This device functions as a high-efficiency power transistor, enabling effective switching and control in electronic circuits.
  • With a significant current rating, it supports demanding loads, ensuring stable performance under varying electrical conditions.
  • The compact package reduces board space, facilitating integration into designs where size constraints are critical.
  • Ideal for motor control applications, it enhances precision and responsiveness in dynamic environments.
  • Manufactured under stringent quality standards, it offers consistent reliability throughout its operational lifespan.
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STH60N099DM9-2AG Overview

The STH60N099DM9-2AG is a high-performance N-channel MOSFET designed for robust power switching applications. Featuring a low on-resistance and fast switching capabilities, this device ensures efficient power management and thermal performance in demanding industrial environments. With a maximum drain-to-source voltage rating of 90 V and a continuous drain current of 60 A, it is optimized for use in motor drives, power supplies, and automotive systems. The compact DM9 package enhances thermal dissipation and integration flexibility. Engineers and sourcing specialists will find this MOSFET a reliable choice for high-efficiency, high-current switching applications. Learn more at IC Manufacturer.

STH60N099DM9-2AG Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)90V
Continuous Drain Current (ID)60A
RDS(on) Max (at VGS = 10 V)9.9m??
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Total Gate Charge (Qg)38nC
Input Capacitance (Ciss)1100pF
Power Dissipation (PD)150W
Operating Junction Temperature (TJ)-55 to 175??C
PackageDM9?C

STH60N099DM9-2AG Key Features

  • Low On-Resistance: The device offers a maximum RDS(on) of 9.9 m?? at 10 V gate drive, minimizing conduction losses and improving overall system efficiency.
  • High Current Capability: Supports continuous drain current up to 60 A, enabling robust switching for high-power industrial and automotive applications.
  • Fast Switching Performance: Low total gate charge (38 nC) ensures rapid switching transitions, reducing switching losses and heat generation.
  • Wide Operating Temperature Range: Suitable for harsh environments with a junction temperature range from -55 ??C to 175 ??C, enhancing reliability and durability.

Typical Applications

  • Power Management Circuits: Ideal for DC-DC converters and power supply modules requiring efficient high current switching with minimal losses.
  • Motor Control Systems: Suitable for motor drives in industrial automation, providing reliable switching under high currents and voltages.
  • Automotive Electronics: Designed to meet rigorous automotive standards, it is used in electric vehicles and automotive powertrain modules.
  • Industrial Inverters: Applicable in inverter circuits for renewable energy systems and industrial motor drives, where efficiency and thermal management are critical.

STH60N099DM9-2AG Advantages vs Typical Alternatives

This MOSFET stands out with its low on-resistance combined with a high continuous current rating, offering significant efficiency improvements over typical alternatives. The fast switching capability reduces power losses during transitions, which is essential for high-frequency industrial applications. Its robust thermal performance and wide operating temperature range ensure reliability in demanding environments, making it a superior choice for engineers focusing on durability and power efficiency.

STH60N099DM9-2AG Brand Info

The STH60N099DM9-2AG is produced by STMicroelectronics, a global leader in semiconductor manufacturing. Known for delivering innovative power

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