STB120NF10T4 Overview
The STB120NF10T4 is a high-performance N-channel MOSFET designed for efficient power management in industrial and automotive applications. Featuring a low on-resistance and a robust maximum drain current rating, it supports high-speed switching with minimal losses. This device offers reliable thermal performance and is optimized for surface-mount assembly, making it ideal for compact, high-density electronic designs. Its rugged construction and precise electrical characteristics ensure dependable operation under demanding conditions, providing engineers and sourcing specialists a versatile solution for power conversion and switching tasks. More details are available at IC Manufacturer.
STB120NF10T4 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Continuous Drain Current (ID) | 120 | A |
| Drain-Source On-Resistance (RDS(on)) | 1.2 | m?? @ 10 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 | V |
| Total Gate Charge (Qg) | 43 | nC |
| Power Dissipation (PD) | 300 | W |
| Operating Temperature Range | -55 to 175 | ??C |
| Package Type | TO-263-3 (D2PAK) | – |
STB120NF10T4 Key Features
- Low On-Resistance: Ensures reduced conduction losses and improved efficiency in power switching applications.
- High Current Capability: Supports continuous drain currents up to 120 A, enabling robust handling of high load demands.
- Fast Switching Speed: Minimizes switching losses, contributing to overall system efficiency and thermal management.
- Thermally Robust Package: The TO-263 package offers excellent heat dissipation, enhancing reliability in high-power environments.
Typical Applications
- DC-DC converters for industrial power supplies, where efficient switching and thermal performance are critical for system stability and longevity.
- Motor control circuits requiring high current handling and fast switching to maintain precise speed and torque control.
- Automotive power management modules, enabling compact, high-efficiency designs within electric and hybrid vehicles.
- Battery management systems that benefit from low conduction losses and reliable operation over wide temperature ranges.
STB120NF10T4 Advantages vs Typical Alternatives
This MOSFET stands out from typical alternatives due to its combination of low on-resistance and high current rating, which reduces power dissipation and improves efficiency. Its fast switching capabilities lower switching losses, making it suitable for high-frequency applications. The robust TO-263 package enhances thermal handling and mechanical reliability, providing a strong advantage in demanding industrial and automotive environments.
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STB120NF10T4 Brand Info
The STB120NF10T4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for their innovation in power devices, STMicroelectronics offers this MOSFET as part of their extensive portfolio targeting industrial, automotive, and consumer electronics markets. The device benefits from ST??s advanced silicon technology and rigorous quality standards, ensuring dependable performance and long-term reliability.
FAQ
What is the maximum drain-source voltage rating of the STB120NF10T4?
The maximum drain-source voltage (VDS) for this MOSFET is 100 V, allowing it to handle moderately high voltage levels typical in industrial and automotive power circuits.
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Can the STB120NF10T4 handle high continuous currents?
Yes, it supports a continuous drain current of up to 120 A, making it suitable for applications requiring robust current handling such as motor drives and power supplies.
What package type does this MOSFET come in, and why is it beneficial?
The device is packaged in a TO-263-3 (D2
