STB46NF30 Overview
The STB46NF30 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. Featuring a low on-resistance and a maximum drain-source voltage of 300V, this device ensures minimal conduction losses and reliable operation under demanding conditions. Its robust avalanche energy capability and fast switching characteristics make it ideal for applications requiring high efficiency and thermal stability. Manufactured by IC Manufacturer, this transistor offers engineers a dependable solution for power management and electronic control systems.
STB46NF30 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 300 V |
| Continuous Drain Current (I_D) @ 25??C | 46 A |
| Gate Threshold Voltage (V_GS(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (R_DS(on)) | 0.046 ?? (max) @ V_GS=10 V |
| Total Gate Charge (Q_g) | 50 nC (typical) |
| Power Dissipation (P_D) | 150 W |
| Operating Junction Temperature (T_j) | -55 to +175 ??C |
| Package | TO-220 |
STB46NF30 Key Features
- Low On-Resistance: Ensures minimal conduction losses, improving overall circuit efficiency and reducing heat buildup.
- High Voltage Rating: Supports up to 300 V drain-source voltage, enabling use in high-voltage power conversion and switching applications.
- High Continuous Current Capacity: Can handle continuous drain currents up to 46 A, suitable for robust power delivery and load driving.
- Fast Switching Performance: Optimized gate charge characteristics allow rapid switching, minimizing switching losses and enhancing energy efficiency.
Typical Applications
- Power supply circuits and DC-DC converters requiring efficient high-voltage switching with low conduction losses.
- Motor control systems where high current capability and fast switching improve performance and reliability.
- Battery management systems in industrial and automotive sectors that demand robust MOSFETs with high thermal tolerance.
- Switch-mode power supplies (SMPS) and inverter circuits leveraging the device??s low R_DS(on) and avalanche robustness.
STB46NF30 Advantages vs Typical Alternatives
This MOSFET offers a compelling combination of high voltage and current handling with low on-resistance, outperforming many standard devices in terms of conduction efficiency and thermal management. Its fast switching and robust avalanche energy rating provide superior reliability and integration ease, making it an ideal choice for engineers seeking durable, energy-efficient components in demanding industrial power applications.
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STB46NF30 Brand Info
The STB46NF30 is part of the STB series from STMicroelectronics, a global leader in semiconductor technology. Known for its innovation in power transistor design, STMicroelectronics delivers this device with a focus on high reliability and performance. The STB46NF30 benefits from ST??s advanced fabrication processes, ensuring consistent quality and global availability for industrial and commercial applications.
FAQ
What is the maximum voltage rating of the STB46NF30?
The device supports a maximum drain-source voltage of 300 V, making it suitable for high-voltage power switching applications where robust voltage tolerance is required.
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What is the significance of the low R_DS(on) value in this MOSFET?
A low on-resistance reduces conduction losses during operation, which improves energy efficiency and lowers heat dissipation, enhancing overall system reliability and longevity.
Can the STB46NF30 handle high current loads continuously?
Yes, it is rated for continuous drain currents up to 46 A at 25??C, which allows it to manage demanding loads in motor control and power supply applications effectively.
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What package type does the STB46NF30 come in?
The transistor is supplied in a TO-220 package, which provides good thermal dissipation and easy mounting options for power electronics assemblies.
