STB28N65M2 Overview
The STB28N65M2 is a high-performance N-channel MOSFET designed for efficient power switching in industrial and consumer electronics. With a drain-source voltage rating of 650V and a continuous drain current of 28A, it offers robust handling of high-voltage and high-current conditions. This device features low gate charge and optimized switching characteristics, which contribute to reduced power loss and enhanced system efficiency. Ideal for applications requiring reliable, fast switching in power supplies and motor drives, the STB28N65M2 balances ruggedness and performance effectively. For detailed technical support and sourcing, visit IC Manufacturer.
STB28N65M2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 650 | V |
| Continuous Drain Current (ID) @ 25??C | 28 | A |
| Drain Current Pulsed (IDM) | 110 | A |
| Gate Threshold Voltage (VGS(th)) | 3.0 – 5.0 | V |
| Gate Charge (Qg) | 45 | nC |
| Power Dissipation (PD) | 160 | W |
| RDS(on) (max) @ VGS = 10 V | 0.11 | ?? |
| Operating Junction Temperature Range | -55 to 150 | ??C |
STB28N65M2 Key Features
- High Voltage Handling: Supports up to 650V drain-source voltage, allowing use in demanding high-voltage power circuits.
- Low On-Resistance: Features a maximum RDS(on) of 0.11 ?? at 10 V gate drive, minimizing conduction losses and improving efficiency.
- Fast Switching Performance: With a total gate charge of 45 nC, it enables rapid switching, reducing switching losses in PWM and DC-DC converter applications.
- Robust Current Capability: Handles continuous drain currents up to 28A, suitable for high-power applications requiring reliable current flow.
Typical Applications
- Switching power supplies where efficient high-voltage switching is critical for power conversion and thermal management.
- Industrial motor control circuits requiring high current and voltage capability with fast switching response.
- DC-DC converters in renewable energy systems, facilitating efficient power regulation and energy savings.
- Lighting ballasts and inverters that demand rugged MOSFETs capable of handling high-voltage and transient conditions.
STB28N65M2 Advantages vs Typical Alternatives
This MOSFET stands out due to its combination of high voltage tolerance and low on-resistance, delivering improved energy efficiency and thermal performance compared to typical alternatives. Its fast switching and robust current handling reduce losses and increase reliability in power electronics designs. The device??s balanced specifications support integration into compact, cost-effective solutions without sacrificing performance or durability.
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STB28N65M2 Brand Info
The STB28N65M2 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in power semiconductors, providing high-quality MOSFETs optimized for industrial and consumer electronics. This product benefits from ST??s advanced silicon technology, rigorous quality controls, and extensive application support, making it a trusted choice for engineers seeking dependable power switching components.
FAQ
What is the maximum voltage rating of the STB28N65M2?
The device is rated for a maximum drain-source voltage
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