The STD18N65M5 is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial electronics. With a 650V drain-source voltage rating and a low on-resistance, this device provides excellent conduction and switching capabilities. Its robust construction supports high current loads up to 18A, making it suitable for demanding applications such as power supplies, motor drives, and industrial inverters. The MOSFET’s reliable switching characteristics improve system efficiency and thermal performance, ensuring long-term durability. For detailed product reliability and sourcing, visit IC Manufacturer.
STD18N65M5 Technical Specifications
Parameter
Value
Unit
Drain-Source Voltage (VDS)
650
V
Continuous Drain Current (ID)
18
A
Gate Threshold Voltage (VGS(th))
3.0 ?C 5.0
V
On-Resistance (RDS(on))
0.18
??
Total Gate Charge (Qg)
26
nC
Input Capacitance (Ciss)
3000
pF
Power Dissipation (PD)
180
W
Operating Junction Temperature (TJ)
-55 to 150
??C
STD18N65M5 Key Features
High Voltage Handling: Rated for 650V drain-source voltage, allowing use in high-voltage power conversion circuits.
Low On-Resistance: 0.18 ?? typical RDS(on) reduces conduction losses, improving power efficiency and heat management.
Robust Current Capacity: Supports continuous drain current up to 18A, suitable for high-load industrial applications.
Optimized Gate Charge: Total gate charge of 26 nC ensures fast switching speeds with lower drive power requirements, enhancing overall system responsiveness.
Typical Applications
Industrial motor control systems, where efficient switching and high voltage capability are essential for reliable operation under demanding loads.
Power supply units requiring robust switching devices to handle high voltages and currents with minimal energy loss.
Inverters for renewable energy systems, leveraging the device??s voltage and current ratings to optimize power conversion efficiency.
General-purpose high-voltage switching circuits used in industrial automation and control platforms.
STD18N65M5 Advantages vs Typical Alternatives
This MOSFET offers a superior balance of high voltage rating and low on-resistance, which translates to improved efficiency and reduced thermal stress compared to typical alternatives. Its optimized gate charge enables faster switching with less drive energy, enhancing system responsiveness and lowering power dissipation. The robust current handling and wide temperature tolerance ensure reliable long-term operation in industrial environments where precision and durability are critical.
The STD18N65M5 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs designed for industrial, automotive, and consumer electronics applications. The company??s focus on reliability, performance, and innovation is reflected in this device??s robust design and optimized electrical characteristics, making it a trusted choice for engineers and sourcing specialists requiring high-voltage, high-current MOSFETs for demanding applications.
