STD3NK100Z N-Channel MOSFET Transistor, 100V, 3A, TO-252 Package – STMicroelectronics

  • Provides efficient power conversion to support various electronic systems with stable voltage output.
  • Features a specified current rating that ensures reliable performance under typical load conditions.
  • Encased in a compact package, enabling board-space savings for dense circuit designs.
  • Ideal for embedded applications requiring consistent power supply and minimal thermal management.
  • Manufactured to meet standard quality controls, ensuring long-term operational reliability.
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STD3NK100Z Overview

The STD3NK100Z is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a maximum drain-source voltage of 100 V and a low on-resistance, it supports applications requiring high-speed switching and enhanced thermal performance. This device offers reliable operation with a compact SMD package, making it suitable for space-constrained designs. Its robust electrical characteristics ensure reduced conduction losses and improved overall system efficiency. Ideal for engineers and sourcing specialists seeking a trustworthy MOSFET solution, the STD3NK100Z combines power efficiency and durability for demanding electronic applications. Learn more at IC Manufacturer.

STD3NK100Z Technical Specifications

ParameterValue
TypeN-channel MOSFET
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id) @ 25??C3 A
Gate Threshold Voltage (Vgs(th))2.0 ?C 4.0 V
Drain-Source On-Resistance (Rds(on))0.35 ?? @ Vgs = 10 V
Power Dissipation (Pd)1.25 W
Gate Charge (Qg)12 nC (typical)
Operating Temperature Range-55??C to +150??C
PackageTO-252 (DPAK)

STD3NK100Z Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing power efficiency and reducing heat generation in switching applications.
  • High Voltage Rating: Supports up to 100 V, enabling reliable operation in medium-voltage power circuits.
  • Compact TO-252 Package: Saves PCB space while ensuring effective thermal dissipation for sustained performance.
  • Fast Switching Capability: Enables high-frequency operation, improving overall system response and reducing switching losses.

Typical Applications

  • Switching power supplies and DC-DC converters requiring efficient high-speed switching and thermal management.
  • Motor control circuits benefiting from reliable switching and voltage handling capabilities.
  • Battery management systems where low on-resistance and robust voltage ratings ensure safe power regulation.
  • General-purpose load switching in industrial electronics and consumer devices demanding compact, efficient MOSFETs.

STD3NK100Z Advantages vs Typical Alternatives

This MOSFET stands out with its balance of low on-resistance and high voltage rating, offering superior conduction efficiency compared to typical devices in its class. Its compact TO-252 package enhances integration into tight layouts while maintaining effective heat dissipation. These attributes provide engineers with a reliable, power-efficient option that reduces system losses and improves thermal performance without compromising switching speed or durability.

STD3NK100Z Brand Info

The STD3NK100Z is produced by STMicroelectronics, a global leader in semiconductor solutions. Known for their innovation in power management and discrete components, STMicroelectronics provides reliable MOSFETs optimized for industrial and consumer electronics. This product embodies the company??s commitment to delivering high-quality, energy-efficient devices designed to meet rigorous performance and safety standards across diverse applications.

FAQ

What is the maximum operating voltage of the STD3NK100Z?

The device supports a maximum drain-source voltage of 100 V, making it suitable for medium-voltage power applications. This rating ensures safe operation within the specified voltage limits to prevent device breakdown.

How does the on-resistance affect the performance of this MOSFET?

Lower on-resistance reduces conduction losses during operation, which improves power efficiency and reduces heat generation. The STD3NK100Z features a typical Rds(on) of 0.35 ?? at 10 V gate drive, allowing for efficient current flow with minimal power dissipation.

What package type is used for the STD3NK100Z, and why is it important?

The MOSFET is housed in a TO-252 (DPAK) surface-mount package. This package offers a good balance of compact size and thermal performance, enabling easier PCB integration while maintaining effective heat dissipation for reliable operation.

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