STD6N80K5 Overview
The STD6N80K5 is a high-voltage N-channel MOSFET designed for robust power switching applications. Featuring a voltage rating of 800 V and a low on-resistance, it delivers efficient conduction with minimal energy loss, making it ideal for industrial and automotive power management. Its fast switching capabilities and reliable thermal performance support high-frequency operation. This component offers engineers a durable solution for enhancing power conversion efficiency and system reliability. For detailed technical support and sourcing, visit IC Manufacturer.
STD6N80K5 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Continuous Drain Current (ID) at 25??C | 6 | A |
| Gate Threshold Voltage (VGS(th)) | 2?C4 | V |
| Drain-Source On-Resistance (RDS(on)) | 1.8 | ?? |
| Total Gate Charge (Qg) | 35 | nC |
| Input Capacitance (Ciss) | 300 | pF |
| Maximum Power Dissipation (PD) | 75 | W |
| Operating Junction Temperature (Tj) | -55 to 150 | ??C |
STD6N80K5 Key Features
- High Voltage Capability: The 800 V rating enables use in demanding industrial and automotive power circuits requiring robust voltage handling.
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation for enhanced reliability.
- Fast Switching Performance: Supports high-frequency operation, enabling compact designs and reducing electromagnetic interference.
- Wide Operating Temperature Range: Ensures stable performance in harsh environments from -55??C to 150??C, suitable for industrial-grade applications.
Typical Applications
- Power converters and inverters in industrial motor drives requiring efficient high-voltage switching.
- Switching power supplies used in telecommunications and computing equipment.
- Automotive power management systems including DC-DC converters and load switches.
- Energy management systems such as photovoltaic inverters and uninterruptible power supplies (UPS).
STD6N80K5 Advantages vs Typical Alternatives
This MOSFET offers a superior balance of high voltage capability and low on-resistance compared to typical alternatives, reducing conduction losses and improving efficiency. Its fast switching and robust thermal tolerance provide reliable operation in demanding environments. The device??s optimized gate charge supports efficient driving, making it a preferred choice for engineers seeking enhanced power density and reliability in industrial and automotive applications.
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STD6N80K5 Brand Info
The STD6N80K5 power MOSFET is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for its quality and innovation, STMicroelectronics offers this device as part of its advanced portfolio targeting industrial power management. ST??s rigorous design and testing ensure that the component meets stringent standards for reliability and performance, making it suitable for high-voltage, high-efficiency applications worldwide.
FAQ
What is the maximum drain-source voltage rating of the STD6N80K5?
The maximum drain-source voltage (VDS) rating of the device is 800 V, allowing it to operate safely in high-voltage power circuits without breakdown.
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How does the low on-resistance benefit power efficiency?
A lower drain-source on-resistance reduces conduction losses during operation, which translates to higher power efficiency and less heat dissipation, improving overall system
