STD11N65M5 MOSFET Transistor 650V N-Channel TO-220 Package by STMicroelectronics

  • This component efficiently switches electrical signals, enabling improved control in power management systems.
  • Its voltage rating supports demanding operational environments, ensuring stable performance under load.
  • The compact package reduces board space, facilitating denser circuit designs and easier integration.
  • Ideal for industrial motor control applications, it enhances system responsiveness and energy efficiency.
  • Manufactured to meet industry standards, it offers consistent reliability and long-term operational stability.
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STD11N65M5 Overview

The STD11N65M5 is a high-voltage N-channel MOSFET designed for industrial power switching and high-efficiency applications. Featuring a maximum drain-to-source voltage of 650 V and a low on-resistance, this device provides reliable performance in demanding environments. Its robust design supports fast switching speeds and low gate charge, optimizing power conversion efficiency and thermal management. Ideal for use in power supplies, motor drives, and industrial automation, the STD11N65M5 delivers consistent operation under high voltage and current stresses. For more detailed semiconductor solutions, visit IC Manufacturer.

STD11N65M5 Technical Specifications

Parameter Specification
Maximum Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 11 A
On-Resistance (RDS(on)) 0.55 ?? @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) 2.0 ?C 4.0 V
Total Gate Charge (Qg) 40 nC
Drain-Source Diode Forward Voltage (VSD) 1.7 V @ IS = 11 A
Power Dissipation (PD) 75 W
Operating Junction Temperature (TJ) -55 to +150 ??C

STD11N65M5 Key Features

  • High voltage rating: Supports up to 650 V, enabling reliable operation in industrial power circuits and high-voltage switching applications.
  • Low on-resistance: Minimizes conduction losses, improving energy efficiency and reducing heat generation during operation.
  • Fast switching capability: Low total gate charge allows quicker transitions, enhancing overall system performance in switching regulators and motor controls.
  • Robust thermal handling: With a maximum junction temperature up to 150 ??C, this MOSFET ensures dependable performance under thermal stress.

Typical Applications

  • Switching power supplies for industrial equipment, where high voltage tolerance and efficient switching are critical to system reliability and energy savings.
  • Motor control circuits requiring robust high-voltage MOSFETs to manage inductive loads and rapid switching.
  • Industrial automation systems demanding durable and efficient power devices to maintain operational continuity.
  • DC-DC converters used in power management, leveraging low on-resistance for reduced power loss and improved thermal performance.

STD11N65M5 Advantages vs Typical Alternatives

This MOSFET offers a superior balance of high voltage capability and low on-resistance compared to typical alternatives. Its fast switching speed and low gate charge reduce switching losses, improving overall system efficiency. The robust thermal rating enhances reliability in harsh industrial environments. These features make it a preferred choice for engineers seeking dependable power transistors that integrate easily into high-voltage, high-current applications with minimal design trade-offs.

STD11N65M5 Brand Info

The STD11N65M5 is manufactured by STMicroelectronics, a global leader in semiconductor production. STMicroelectronics is known for its innovation in power MOSFET technology, delivering components optimized for industrial, automotive, and consumer electronics markets. The company??s commitment to quality and reliability ensures this device meets stringent industry standards, making it an ideal component in demanding power management and switching applications.

FAQ

What is the maximum voltage rating of this MOSFET?

The device is rated for a maximum drain-to-source voltage of 650 V, making it suitable for high-voltage applications such as industrial power supplies and motor drives.

How does the on-resistance affect device performance?

A low on-resistance of 0.55 ?? at 10 V gate drive reduces conduction

Application

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