STD25NF10LT4 N-Channel MOSFET 25A 100V TO-220 Package by STMicroelectronics

  • Acts as a high-efficiency transistor enabling precise control of electrical power in circuits.
  • Features a voltage rating that supports stable operation under demanding electrical conditions.
  • Utilizes a compact package type, allowing for efficient board-space utilization in dense layouts.
  • Ideal for power management in industrial or automotive applications, improving overall system performance.
  • Manufactured to meet strict quality standards, ensuring consistent reliability in long-term usage.
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STD25NF10LT4 Overview

The STD25NF10LT4 is a high-performance N-channel MOSFET designed for efficient power switching and amplification in industrial and consumer electronics. Featuring a low on-resistance and high current handling capability, it provides reliable operation in demanding environments. Its compact SOT-223 package supports thermal management and easy PCB integration, making it suitable for power management circuits, motor drives, and DC-DC converters. Engineered for robust switching with fast gate charge characteristics, this transistor optimizes system efficiency and reduces power loss. Available from IC Manufacturer, it meets the stringent requirements of modern electronics design and sourcing professionals.

STD25NF10LT4 Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)25A
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Static Drain-Source On-Resistance (RDS(on))?? 0.035??
Gate Charge (Qg)30nC
Maximum Power Dissipation (PD)50W
Operating Junction Temperature (Tj)-55 to +150??C
PackageSOT-223?C
Total Gate Charge (Qg)30nC
Input Capacitance (Ciss)650pF

STD25NF10LT4 Key Features

  • Low On-Resistance: With an RDS(on) of just 35 m??, this device minimizes conduction losses, enhancing energy efficiency in power systems.
  • High Current Capability: Supports continuous drain currents up to 25A, enabling reliable operation in medium-power applications such as motor control and power supplies.
  • Fast Switching Performance: Moderate gate charge facilitates rapid switching, reducing switching losses and improving overall system responsiveness.
  • Compact SOT-223 Package: Provides an excellent balance between size and thermal dissipation, simplifying PCB layout and thermal management.

Typical Applications

  • Switching regulators and DC-DC converters where efficient power conversion is critical to reduce heat dissipation and improve battery life.
  • Motor drive circuits requiring robust current handling and fast switching to control speed and torque effectively.
  • Load switching and power management modules in industrial control systems for reliable operation under varying load conditions.
  • General-purpose high-speed switching applications in consumer electronics and automotive systems.

STD25NF10LT4 Advantages vs Typical Alternatives

This MOSFET offers a superior combination of low on-resistance and high current rating compared to typical alternatives in the same voltage class, resulting in lower conduction losses and improved efficiency. Its fast switching capability reduces switching losses, enhancing overall power system performance. The SOT-223 package supports effective thermal management and compact design integration, making it a reliable and efficient choice for power switching applications.

STD25NF10LT4 Brand Info

The STD25NF10LT4 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. Known for innovative power management devices, STMicroelectronics provides this MOSFET as part of its extensive portfolio targeting industrial and automotive markets. The device benefits from ST??s rigorous quality standards, ensuring robustness, reliability, and long-term availability for critical applications.

FAQ

What is the maximum voltage rating for this MOSFET?

The device supports a maximum drain-source voltage of 100V, making it suitable for medium-voltage power switching applications where high voltage tolerance is required.

How does the on-resistance affect device performance

Application

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