STTH803G-TR Overview
The STTH803G-TR is a high-performance ultrafast diode designed for efficient rectification in power electronics applications. Offering a maximum repetitive peak reverse voltage of 800 V and a forward current capability of 8 A, it ensures reliable operation in demanding industrial environments. Its ultrafast recovery time reduces switching losses, making it suitable for high-frequency converters and inverters. Packaged in a compact DO-201AD case, this semiconductor device balances power density and thermal management. For engineers and sourcing specialists seeking robust, cost-effective solutions, the STTH803G-TR delivers consistent performance and durability. More details are available at IC Manufacturer.
STTH803G-TR Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 800 | V |
| Average Forward Current (IF(AV)) | 8 | A |
| Surge Non-Repetitive Forward Current (IFSM) | 150 | A |
| Forward Voltage Drop (VF) at IF=8A | 1.7 | V |
| Reverse Recovery Time (trr) | 75 | ns |
| Junction Temperature (Tj) | -65 to 150 | ??C |
| Storage Temperature Range (Tstg) | -65 to 150 | ??C |
| Package Type | DO-201AD | ?C |
STTH803G-TR Key Features
- Ultrafast recovery time: Minimizes switching losses in high-frequency power converters, increasing overall system efficiency.
- High surge current capability: Supports peak currents up to 150 A, providing robustness against transient overload conditions.
- Compact DO-201AD package: Enables easy integration into space-constrained designs while ensuring good thermal dissipation.
- Wide operating temperature range: Reliable operation from -65??C to 150??C suits harsh industrial environments.
Typical Applications
- Rectification in switch-mode power supplies (SMPS), where ultrafast switching diodes improve efficiency and reduce electromagnetic interference.
- Freewheeling diode in motor drives, providing fast recovery to protect power transistors during inductive load switching.
- Snubber circuits in power converters, enhancing voltage spike suppression for better device longevity.
- High-frequency inverters and UPS systems, where rapid switching and high voltage capabilities are essential.
STTH803G-TR Advantages vs Typical Alternatives
The device offers a combination of ultrafast recovery and high surge current capacity that typical silicon diodes may lack. This results in reduced switching losses and improved thermal management, enhancing reliability and efficiency in power electronics. Compared to slower recovery diodes, it lowers electromagnetic interference and supports higher frequency operation, making it a superior choice for demanding industrial applications.
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STTH803G-TR Brand Info
The STTH803G-TR is manufactured by STMicroelectronics, a leading global semiconductor company known for its innovation in discrete and power devices. As part of ST??s ultrafast diode portfolio, it benefits from extensive quality controls and global availability. STMicroelectronics focuses on delivering reliable semiconductor components that meet the rigorous demands of industrial, automotive, and consumer electronics markets.
FAQ
What is the maximum repetitive peak reverse voltage rating?
The maximum repetitive peak reverse voltage (VRRM) of this diode is 800 V, allowing it to withstand high-voltage reverse bias conditions typical in power rectification and switching applications without damage.
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How does the ultrafast recovery time impact circuit performance?
The ultrafast recovery time of 75 ns reduces switching losses, which improves efficiency and minimizes electromagnetic interference in high-frequency power electronics circuits such as SMPS and inverters.
What package type is used for this diode and why is it important?
This diode is housed in a DO-201AD package, which offers a compact footprint and good thermal dissipation. This packaging facilitates easy mounting and reliable heat management in power applications.
