STPSC6H065D Overview
The STPSC6H065D is a high-performance power semiconductor device designed for efficient power conversion and robust switching applications. It integrates a dual-function diode and MOSFET in a compact SMD package, enabling improved system reliability and reduced board space. This device supports high current handling and low conduction losses, making it ideal for industrial power supplies, motor drives, and energy management systems. With its optimized avalanche energy capability and low gate charge, it ensures enhanced efficiency and thermal stability in demanding environments. For more in-depth details, visit IC Manufacturer.
STPSC6H065D Technical Specifications
| Parameter | Specification |
|---|---|
| Technology | STPOWER? MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 6 A |
| RDS(on) (Max) at 4.5 V Gate | 0.065 ?? |
| Package | TO-252 (DPAK) |
| Gate Threshold Voltage (VGS(th)) | 2.0 ?C 4.0 V |
| Input Capacitance (Ciss) | 380 pF |
| Avalanche Energy (EAS) | 120 mJ |
| Operating Junction Temperature | -55??C to +150??C |
STPSC6H065D Key Features
- High Voltage Capability: Rated for 650 V drain-source voltage, enabling use in high-voltage industrial power circuits.
- Low On-Resistance: Maximum RDS(on) of 0.065 ?? reduces conduction losses and improves overall system efficiency.
- Robust Avalanche Energy: Supports up to 120 mJ avalanche energy, enhancing reliability during inductive load switching.
- Compact TO-252 Package: Facilitates easy PCB integration while ensuring effective thermal dissipation.
Typical Applications
- Switch mode power supplies (SMPS) in industrial environments requiring efficient switching and thermal stability.
- Motor control drives for precise speed regulation and enhanced power efficiency.
- Energy management systems where low conduction losses and high voltage tolerance are critical.
- Battery management and charger circuits needing reliable high-voltage switching components.
STPSC6H065D Advantages vs Typical Alternatives
This device offers superior integration of MOSFET and diode functions, resulting in reduced component count and board space compared to discrete alternatives. Its low RDS(on) and high avalanche energy rating deliver enhanced efficiency and reliability under high-voltage, high-current conditions. These attributes make it a preferred choice for engineers seeking robust performance with simplified thermal management and minimized switching losses.
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STPSC6H065D Brand Info
The STPSC6H065D is a product of STMicroelectronics, a global leader in semiconductor manufacturing known for innovative power devices. As part of ST??s STPOWER? MOSFET family, this component reflects the brand??s commitment to delivering high-quality, reliable, and efficient solutions for demanding power electronics applications. STMicroelectronics supports this device with extensive technical documentation and application support, ensuring seamless integration into industrial designs.
FAQ
What is the maximum voltage rating of this device?
The device is rated for a maximum drain-source voltage of 650 V, making it suitable for high-voltage power applications often encountered in industrial and automotive sectors.
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How does the low RDS(on) benefit system performance?
A low RDS(on) reduces conduction losses during operation, which directly improves energy efficiency and reduces heat generation, allowing for smaller heat sinks and more compact system designs.
What type of package does this component use?
It is housed in a TO-252 (DPAK) package, which provides robust mechanical strength and effective thermal dissipation, suitable for surface-mounted assembly in compact layouts.
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Can this device handle inductive load switching?
Yes, with
