STPST5H100SBY-TR STMicroelectronics Power MOSFET N-Channel 100V SMD Package

  • This device provides efficient power switching, enabling reliable control in various electronic circuits.
  • It features a high current rating, ensuring stable operation under demanding load conditions.
  • The compact package reduces board space, facilitating integration into space-constrained designs.
  • Ideal for power management in industrial equipment, enhancing system performance and durability.
  • Manufactured to meet stringent quality standards, ensuring consistent performance over time.
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STPST5H100SBY-TR Overview

The STPST5H100SBY-TR is a high-performance N-channel Power MOSFET designed for efficient power management and switching applications. Engineered with a robust 100 V drain-to-source voltage rating, it supports continuous drain current up to 5 A, making it suitable for industrial and automotive use. The device features low on-resistance (RDS(on)) for reduced conduction losses and improved efficiency under high load conditions. Packaged in a compact, thermally efficient TO-252-3L form factor, this transistor offers reliable switching performance with optimized gate charge characteristics, ensuring faster switching speed and lower power dissipation. This makes it a versatile choice for engineers requiring high reliability and superior electrical performance. Available in tape and reel packaging, it simplifies automated assembly processes. For more detailed technical information, visit IC Manufacturer.

STPST5H100SBY-TR Technical Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID) @ Tc=25??C5A
Drain Current Pulsed (IDM)20A
On-Resistance (RDS(on)) @ VGS=10 V0.075??
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Total Gate Charge (Qg)11nC
Input Capacitance (Ciss)2300pF
Power Dissipation (PD)2W
Operating Junction Temperature (Tj)-55 to 150??C
PackageTO-252-3L (DPAK)?C

STPST5H100SBY-TR Key Features

  • Low On-Resistance: Minimizes conduction losses, enabling higher efficiency in power switching and reducing thermal stress on the device.
  • High Voltage Handling: Supports up to 100 V drain-to-source voltage, suitable for demanding industrial and automotive environments.
  • Fast Switching Capability: Optimized gate charge characteristics ensure quicker switching times, improving overall system performance and reducing switching losses.
  • Compact TO-252 Package: Provides excellent thermal dissipation and mechanical reliability while supporting automated PCB assembly processes.

Typical Applications

  • DC-DC converters and power management modules requiring efficient switching and thermal management in industrial power supplies.
  • Motor control circuits where resilient high-voltage MOSFETs reduce energy loss and improve system reliability.
  • Battery management systems in automotive and energy storage applications demanding robust switching elements.
  • Load switching and relay replacement in industrial automation systems, benefiting from compact size and low power dissipation.

STPST5H100SBY-TR Advantages vs Typical Alternatives

This transistor offers superior performance through a combination of low on-resistance and high voltage rating, resulting in reduced power loss and enhanced reliability compared to typical MOSFETs. Its compact TO-252 package facilitates efficient thermal management and integration in space-constrained designs. The optimized gate charge allows faster switching speeds, improving overall system efficiency and reducing electromagnetic interference. These advantages make it a practical choice for engineers focused on durable, high-efficiency power switching solutions.

STPST5H100SBY-TR Brand Info

The STPST5H100SBY-TR is manufactured by STMicroelectronics, a global leader in semiconductor technology. STMicroelectronics specializes in advanced power management devices, offering high-quality MOSFETs designed for automotive, industrial, and consumer electronics markets. This product

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