STPST10H100SBYTR STMicroelectronics 100V Power MOSFET, TO-220 Package

  • This device provides efficient switching control, enabling precise power management in electronic circuits.
  • Featuring a voltage rating suitable for high-load applications, it ensures stable operation under demanding conditions.
  • The compact package reduces board space requirements, facilitating design flexibility in constrained layouts.
  • Ideal for power supply units, it enhances energy efficiency and thermal performance in real-world systems.
  • Manufactured with quality standards that promote long-term durability and consistent operational reliability.
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STPST10H100SBYTR Overview

The STPST10H100SBYTR is a high-performance IGBT transistor designed for industrial power switching applications. Featuring a voltage rating of 1000 V and a continuous collector current of 10 A, this device offers robust switching capabilities with low conduction losses. Its advanced planar structure ensures reliable operation under demanding conditions, making it ideal for use in motor drives, power supplies, and inverters. The compact TO-247 package supports efficient thermal management, enhancing longevity and operational stability. The STPST10H100SBYTR delivers excellent switching speeds and ruggedness, providing engineers and sourcing specialists with a cost-effective solution for high-voltage power electronics. Available through IC Manufacturer.

STPST10H100SBYTR Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (V_CES)1000 V
Continuous Collector Current (I_C)10 A
Gate-Emitter Voltage (V_GES)??20 V
Collector Dissipation (P_C)150 W
Gate Charge (Q_g)Typical 60 nC
Turn-On Delay Time (t_d(on))Typical 50 ns
Turn-Off Delay Time (t_d(off))Typical 150 ns
Junction Operating Temperature (T_j)-55 to +150 ??C
PackageTO-247

STPST10H100SBYTR Key Features

  • High voltage rating of 1000 V enables handling of demanding power applications with enhanced safety margins.
  • 10 A continuous collector current supports robust power delivery in motor control and inverter circuits.
  • Fast switching times reduce switching losses, improving overall system efficiency and thermal management.
  • Rugged TO-247 package facilitates efficient heat dissipation, supporting reliable operation at high power levels.
  • Wide gate-emitter voltage range (??20 V) ensures flexible gate drive compatibility for varied control schemes.
  • Low gate charge minimizes driving power requirements and contributes to improved switching performance.

Typical Applications

  • Industrial motor drives requiring reliable high-voltage switching and efficient power conversion in harsh environments.
  • Power inverters for renewable energy systems, benefiting from fast switching and high current capabilities.
  • Switched-mode power supplies (SMPS) where efficient energy transfer and thermal performance are critical.
  • Uninterruptible power supplies (UPS) leveraging fast switching and robust voltage handling for dependable operation.

STPST10H100SBYTR Advantages vs Typical Alternatives

This transistor offers superior voltage handling and current capacity compared to many standard IGBTs, ensuring greater reliability in high-power applications. Its fast switching speeds and low gate charge reduce switching losses and improve overall system efficiency. The rugged TO-247 package enhances thermal dissipation, extending device lifespan under heavy load. These advantages make it a preferred choice for engineers seeking reliable, efficient, and cost-effective power semiconductor solutions.

STPST10H100SBYTR Brand Info

The STPST10H100SBYTR is manufactured by STMicroelectronics, a global leader in semiconductor solutions specializing in power electronics and discrete devices. STMicroelectronics designs this IGBT transistor to meet the stringent demands of industrial and automotive power applications. Known for combining cutting-edge technology with proven reliability, STMicroelectronics offers this device within a broad portfolio of power transistors optimized for performance, efficiency, and thermal management. The STPST10H100SBYTR benefits from ST??s extensive quality control and innovation, ensuring consistent performance in critical applications.

FAQ

What is the maximum voltage this device can withstand?

The device can handle a maximum collector-emitter voltage of 1000 V, making it suitable for high-voltage power switching applications.

What package does the transistor come in, and why is it important?

The transistor is packaged in a TO-247 case, which provides excellent thermal dissipation and mechanical robustness, essential for high-power and high-temperature environments.

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